Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Abstract

The invention discloses a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate. The solid-state imaging device, the method of manufacturing the solid-state imaging device, and the electronic apparatus can inhibit dark current at the substrate interface, and reduce non-uniformity of technology, thereby preventing generation of white spots.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2010-227757 filed with Japan Patent Office on Oct. 7, 2010, the entire content of which is hereby incorporated by reference This article. technical field [0003] The present invention relates to a back-illuminated solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic device using the solid-state imaging device. Background technique [0004] In the related art, a CCD-type solid-state imaging device and a CMOS-type solid-state imaging device have been proposed as solid-state imaging devices used in digital still cameras or video cameras. In such a solid-state imaging device, a light receiving section is formed in each of a plurality of pixels formed in a two-dimensional matrix, and signal charges are generated in the light receiving section in accordance with th...

AI Technical Summary

Problems solved by technology

[0006] However, with the miniaturization of solid-state imaging devices, there is such a problem in the above-mentioned surface-type solid-state imaging devices that the wiring pitch is reduced while the wiring layer is multi-layered, so that the on-chip lens and the silicon substrate are separated. The distance between the light-receiving parts increases

[0013] However, in running through Figure 20 In the case where the vertical gate electrode 108 is formed on the substrate 106 shown in , when a through-hole is formed from the surface side of the substrate 106 to the back side thereof, the deep portion of the substrate 106 is damaged by the back-flowing etchant

Therefore, there is a problem on the back side of the substrate 106 that carriers are generated at corners (surrounded by a dotted line “a”) extending from the inner peripheral surface of the end portion of the via hole to the back side of the substrate, and due to The above-mentioned carriers are mixed with the carriers (signal) generated by photoelectric conversion to generate noise, thereby increasing the so-called white point

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