Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

A technology of a solid-state imaging device and a manufacturing method, which is applied in the direction of electric solid-state devices, solid-state image signal generators, semiconductor devices, etc., can solve problems such as the inability to bear the stress of SiN films, the expansion and contraction of propylene thermoplastic resins, etc., and achieve improved sensitivity characteristics, high The effect of sensitivity

CN102446937AActive Publication Date: 2012-05-09SONY SEMICON SOLUTIONS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2012-05-09

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Abstract

The invention discloses a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film. The solid-state imaging device, the method of manufacturing the solid-state imaging device, and the electronic apparatus can improve image quality and sensitivity characteristic.
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Description

[0001] Cross reference of related applications

[0002] This application contains the subject matter related to the disclosure of the Japanese priority patent application JP 2010-227755 filed with the Japan Patent Office on October 7, 2010, and the entire content of the priority patent application is hereby incorporated by reference. . Technical field

[0003] The present invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic device such as a camera equipped with the solid-state imaging device. Background technique

[0004] As a solid-state imaging device (image sensor), a CMOS solid-state imaging device or a CCD solid-state imaging device has been proposed. Solid-state imaging devices have been used in digital cameras, digital video cameras, and various portable terminal devices (for example, mobile phones equipped with cameras, etc.). The CMOS solid-state imaging device has a lower power supply voltage than ...

Examples

no. 1 example

[0054] 1. First Embodiment (Example of structure and manufacturing method of solid-state imaging device)

no. 2 example

[0055] 2. Second Embodiment (Example of structure and manufacturing method of solid-state imaging device)

no. 3 example

[0056] 3. Third Embodiment (Example of structure and manufacturing method of solid-state imaging device)