Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Abstract

The invention discloses a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film. The solid-state imaging device, the method of manufacturing the solid-state imaging device, and the electronic apparatus can improve image quality and sensitivity characteristic.

Description

[0001] Cross reference of related applications [0002] This application contains the subject matter related to the disclosure of the Japanese priority patent application JP 2010-227755 filed with the Japan Patent Office on October 7, 2010, and the entire content of the priority patent application is hereby incorporated by reference. . Technical field [0003] The present invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic device such as a camera equipped with the solid-state imaging device. Background technique [0004] As a solid-state imaging device (image sensor), a CMOS solid-state imaging device or a CCD solid-state imaging device has been proposed. Solid-state imaging devices have been used in digital cameras, digital video cameras, and various portable terminal devices (for example, mobile phones equipped with cameras, etc.). The CMOS solid-state imaging device has a lower power supply voltage than ...

AI Technical Summary

Problems solved by technology

In this state, when an antireflection film composed of, for example, a SiN film is formed on the surface of the microlens, the acrylic thermoplastic resin as the color filter cover film may not be able to withstand the stress of the SiN film, and the acrylic thermoplastic resin may Stretch phenomenon

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