Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

Abstract

The invention discloses a solid-state imaging device, a manufacturing method of the solid-state imaging device and an electronic device. The solid-state imaging device includes: a plurality of pixels, each of which is formed on a semiconductor substrate and includes a photoelectric conversion unit and a unit for reading out signal charges of the photoelectric conversion unit; an on-chip microlens, the on-chip microlens is made of an organic film and located on the color filter corresponding to each of the pixels; a first inorganic film, the first inorganic film is formed on the on-chip microlens and having a higher refractive index than the on-chip microlens; and a second inorganic film formed on the surface of the first inorganic film and having a higher refractive index than the on-chip microlens and the The first inorganic film has a low refractive index. At least the second inorganic film does not have a non-lens region at an interface between adjacent second inorganic films. The present invention can improve image quality and improve sensitivity characteristics.

Description

[0001] Cross References to Related Applications [0002] The present application contains subject matter related to the disclosure of Japanese Priority Patent Application JP2010-227755 filed in the Japan Patent Office on Oct. 7, 2010, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic device such as a camera equipped with the solid-state imaging device. Background technique [0004] As a solid-state imaging device (image sensor), a CMOS solid-state imaging device or a CCD solid-state imaging device has been proposed. Solid-state imaging devices have been used in digital still cameras, digital video cameras, and various portable terminal devices such as camera-equipped cell phones and the like. CMOS solid-state imaging devices have a lower power supply voltage than CCD solid-state imaging devices, an...

AI Technical Summary

Problems solved by technology

In this state, when an antireflection film composed of, for example, a SiN film is formed on the surface of the microlens, the acrylic thermoplastic resin as the color filter cover film may not be able to withstand the stress of the SiN film, and the acrylic thermoplastic resin may Stretch phenomenon

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