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Integrated circuit device and manufacturing method thereof

A technology of integrated circuits and components, which is applied in the field of electronic components to achieve the best performance

Active Publication Date: 2014-03-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, although the current Schottky element and its manufacturing method have gradually met the intended purpose, as the size of the element continues to decrease, the Schottky element and its manufacturing method cannot fully meet the needs of various aspects.

Method used

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  • Integrated circuit device and manufacturing method thereof
  • Integrated circuit device and manufacturing method thereof
  • Integrated circuit device and manufacturing method thereof

Examples

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Embodiment Construction

[0035] The following disclosure provides many different embodiments, or examples, of implementing various features of the invention. For the sake of brevity, specific components and arrangements will be described as examples below. Certainly, the present invention is only used as an example, and is not intended to limit the present invention. For example, when a first element is formed on or over a second element as follows, it may include embodiments in which the first element and the second element are formed in direct contact, and other elements are spaced apart from the first element. An embodiment between an element and a second element such that the first element may not be in direct contact with the second element. In addition, this description may use repeated reference numerals and / or indications in different embodiments. This repetition is only for the purpose of simply and clearly describing the present invention, and does not represent any relationship between th...

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Abstract

An integrated circuit device and method for fabricating the integrated circuit device is disclosed. The integrated circuit device includes a substrate, a diffusion source, and a lightly doped diffusion region in contact with a conductive layer. A junction of the lightly doped diffusion region with the conductive layer forms a Schottky region. An annealing process is performed to form the lightly doped diffusion region. The annealing process causes dopants from the diffusion source (for example, an n-well disposed in the substrate) of the integrated circuit device to diffuse into a region of the substrate, thereby forming the lightly doped diffusion region.

Description

technical field [0001] The present invention relates to electronic components, and in particular to integrated circuit components and methods of making the same. Background technique [0002] Integrated circuit technology continues to advance. Advances in these technologies often involve shrinking device dimensions to reduce manufacturing costs, increase device integration density, increase speed, and improve performance. In addition to the advantages of shrinking component size, the integrated circuit components themselves have also improved. One of the integrated circuit components is the schottky barrier diode, which has a low forward voltage drop, a switching speed close to zero time, and is especially beneficial for radio frequency (radio-frequency) application. Schottky barrier diodes include a metal that contacts a surface of a semiconductor material. For example, the Schottky device includes a metal silicide layer that contacts a well region, such as an N-well re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/22H01L21/329
CPCH01L29/872H01L29/6606H01L29/66143H01L29/0692H01L29/0619H01L29/66212H01L29/1095H01L29/20
Inventor 叶秉君叶德强赵治平
Owner TAIWAN SEMICON MFG CO LTD