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Thermal field device

A technology of thermal field and thermal insulation layer, which is applied in post-processing devices, crystal growth, post-treatment, etc., can solve the problems of lower crystal quality, inability to remove impurities, and high crystal impurity concentration

Inactive Publication Date: 2012-05-16
NAT CENT UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] However, the gas delivery pipe 25 in the conventional heat field device only roughly extends into the thermal field below the upper heat insulating layer 23, so it is very easy to cause the nozzle of the gas delivery pipe 25 and the free surface of the silicon molten soup 11 inside the crucible 21 (silicon The distance between the molten soup and the contact surface of the gas) is too long, so that the air flow discharged from the gas delivery pipe 25 cannot effectively take the impurities away from the free surface, so that the formed crystals contain a higher concentration of impurities, thereby reducing the quality of the crystals

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Embodiment Construction

[0044] The present invention is also a crystal growth furnace for manufacturing silicon crystals, such as figure 2 As shown, it is mainly based on a crucible 31 for containing silicon molten soup 41, and a heat insulating layer 32 is provided on the periphery of the crucible 31 to form a sealed thermal field, and a heater 37 is provided in the thermal field for Silicon metal is heated.

[0045] The heat field device of the present invention is provided with a gas delivery pipe 33 that can relatively extend into the crucible 31 at a position above the heat insulating layer 32 relative to the crucible 31 for connecting inert gas, and the heat insulating layer 32 is provided with a predetermined number of exhaust gas The holes 34 are used to cooperate with the gas with a predetermined flow rate input from the gas delivery pipe 33, so as to generate an air flow passing through the thermal field, so as to discharge the oxides that are easy to form impurities; of course, a cover pl...

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Abstract

The invention discloses a thermal field device. In the device, a thermal insulating layer which is relatively covered at the periphery of a crucible is used as a main body; an air conveying pipe which can be relatively extended into the crucible is arranged at the position, relative to the upper side of the crucible, of the thermal insulating layer; and air exhaust holes with preset quantity are formed in the thermal insulating layer. The air conveying pipe is relatively extended into the crucible, so that the distance from the mouth of the air conveying pipe to a melting free surface inside the crucible is kept within 10cm, and the melting free surface is synchronously blown by guiding airflow; and the speed of removing impurities from the free surface is increased to effectively reduce the concentration of the impurities, so that the quality of crystals which are melted, cooled and solidified is improved.

Description

technical field [0001] The invention relates to a thermal field device for manufacturing crystals, especially a thermal field device that can effectively reduce the concentration of impurities. Background technique [0002] As we all know, solar cells are a non-polluting renewable energy that uses the interaction of sunlight and materials to directly generate electricity. In particular, solar cells do not release any gases including carbon dioxide during use, which can obviously improve the ecological environment and solve the problem of global warming. effect problem. [0003] A solar cell is a device that converts solar energy into electrical energy, and does not need to transmit conductive ions through an electrolyte. Instead, it uses a semiconductor to generate a PN junction to obtain a potential. When the semiconductor is irradiated by sunlight, a large number of free electrons are produced. , and this movement of electrons generates a current, that is, a potential dif...

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Application Information

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IPC IPC(8): C30B35/00
Inventor 陈志臣邓应扬吕中伟陈学亿
Owner NAT CENT UNIV