Protective cover and surface treatment method thereof
A technology for surface treatment and protective cover, which is applied in metal material coating process, electrical components, semiconductor/solid-state device manufacturing, etc. and other problems to achieve the effect of enhancing the adsorption capacity, reducing the probability of falling off on the wafer, and improving the yield
Active Publication Date: 2014-01-08
CSMC TECH FAB2 CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, for some metals or alloys (such as titanium nitride), its characteristics are greatly affected by temperature. If the temperature changes greatly or frequently, the traditional protective cover will still not be enough to adhere to the titanium nitride, causing the protective cover Titanium nitride particles on the surface fall on the wafer, causing a decrease in the yield of the wafer
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] In order to make the objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0021] A method for surface treatment of a protective cover, comprising the step of forming the protective cover, and further comprising the step of spraying the surface of the protective cover with an aluminum material: performing spray treatment on the protective cover with an aluminum material. Spraying (sputtering) molten aluminum powder onto the surface of the protective cover, so that the aluminum material is evenly deposited on the surface of the protective cover to form a uniformly covered aluminum material layer.
[0022] figure 1 It is a flow chart of the surface treatment method of protective cover in an embodiment, comprising the following steps:
[0023] S110, spraying the protective cover with aluminum material. Flame powder ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| surface roughness | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
| surface roughness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a surface treatment method of a protective cover. The surface treatment method comprises the following steps of: forming the protective cover and carrying out meltallizing treatment on the surface of the protective cover by using an aluminum material. The invention also relates to the protective cover for semiconductor metal plasma deposition, wherein an aluminum material layer uniformly covers the surface of the protective cover. According to the surface treatment method of the protective cover and the protective cover treated by the method disclosed by the invention, the aluminum material layer is formed on the surface of the protective cover in a meltallizing way, so that the adsorption capability of the protective cover is enhanced; in addition, because aluminum can bear larger temperature difference change, the possibility that a metal film on the surface of the protective covers drops to a wafer is greatly reduced, the yield of products is improved, and the production efficiency is increased.
Description
【Technical field】 [0001] The invention relates to a semiconductor process, in particular to a surface treatment method for a protective cover, and also to a protective cover for semiconductor metal plasma deposition. 【Background technique】 [0002] In the process of using metal plasma (IMP) to deposit a metal (or alloy) film, such as titanium nitride, it will not only be deposited on the wafer (wafer), but also deposited on the machine cavity (chamber) The inner surface. Therefore, when designing the machine, the manufacturer has provided some parts, such as a protective cover, to protect the inner surface of the cavity. In this way, titanium nitride (or other metals, alloys) will only be deposited on the surface of the wafer and the protective cover, and the protective cover can be recycled only after a period of time is removed for cleaning. [0003] In order to prevent the metal or alloy deposited on the protective cover from falling off, the traditional technology is t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/12C23C4/08H01L21/00C23C4/123
Inventor 朱春明高华伟罗明新
Owner CSMC TECH FAB2 CO LTD