Radio frequency noise de-embedding method

Abstract

The invention discloses a radio frequency noise de-embedding method, which comprises the following steps of: forming a device under test, an open de-embedding test structure and a thru de-embedding test structure on a silicon chip; performing tests to obtain scattering parameters of the device under test, the open de-embedding test structure and the thru de-embedding test structure and a noise parameter of the device under test; and performing de-embedding calculation by utilizing each scattering parameter and the noise parameter of the device under test to obtain a noise parameter of a radio frequency device, wherein the normalized characteristic impedance and propagation constant of a pure metal wire are calculated by utilizing the scattering parameters of inter-signal metal wires of the thru de-embedding test structure, and then an ABCD parameter of an input end metal wire or an output end metal wire of the device under test is calculated. By the method, the number of the thru de-embedding test structures on the silicon chip can be greatly decreased, the area of the silicon chip can be saved, test time can be shortened, and cost can be greatly decreased.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a radio frequency noise de-embedding method. Background technique [0002] For RF noise testing, the parasitic resistance, capacitance, and inductance of pads and wiring in the test structure will have a relatively large impact on the test results. In order to obtain accurate noise parameters of the device under test (DUT) structure (Device Under Test, DUT), these parasitic effects need to be removed, that is, de-embedding (De-embedding) is required. The most used in the prior art is as described in the document "C.H.CHEN and M.J.DEEN, "High frequency Noise of Mosfets I Modeling". Solid-state Electronics Vol.42, No.11, pp.2069-2081, 1998" The Open de-embedding (Open de-embedding) method; and such as the literature "K.Aufinger and J.Bock, "A Straightforward Noise De-embedding Method and Its Application to High-Speed ​​Silicon Bipolar Transistors", Pro...

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Problems solved by technology

[0014] Although the de-embedding structure of the existing open-through de-embedding method combined with the existing de-embedding calculation can effectively remove parasitic resistance, capacitance, and inductance, and obtain relatively accurate noise parameters, each device under test structure 1 needs to be equipped with two through-through de-embedding The embedded test structure is the first through de-embedding test structure 3A and the second through-de-embedding test structure 3B; When the first metal line 12 and the second metal line 13 change, the metal line 12a of the first through de-embedding test structure 3A and the metal line 13a of the second through-de-embedding test structure 3B will all be changed; Designing a lot of through-de-embedding test structures not only wastes the area of ​​the silicon chip, but also brings trouble to the test, requiring more time to test

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