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Active matrix substrate and active matrix display device

An active matrix and substrate technology, which is applied in the field of active matrix display devices, can solve problems such as abnormal line width, poor display, poor wire breakage, etc., and achieve the effect of improving patterning accuracy

Active Publication Date: 2014-09-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0023] However, in the case where the main wiring 150 is formed in the same layer as the gate pattern and the branch wiring 160 is formed in the same layer as the data pattern as in the above-mentioned configuration of Patent Document 1, there is a problem that because the following Cause, easy to cause poor display caused by broken line and abnormal line width

Method used

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  • Active matrix substrate and active matrix display device
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  • Active matrix substrate and active matrix display device

Examples

Experimental program
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Effect test

Embodiment approach 1

[0074] Below, according to Figure 1 to Figure 7 The configuration of the TFT array substrate 1 as an active matrix substrate included in a liquid crystal display device which is an example of the active matrix display device of the present invention will be described.

[0075] Figure 4 It is a diagram showing a schematic configuration of the TFT array substrate 1 .

[0076] As shown in the figure, the TFT array substrate 1 includes a display region R1 and a peripheral region R2 located around the display region R1.

[0077] In the display region R1 , pixel TFT elements 2 , and pixel electrodes 3 connected to the pixel TFT elements 2 are provided in a matrix.

[0078] Such as Figure 4 As shown, the pixel TFT element 2 has the following structure: on the insulating substrate 4, the gate bus line GL and the gate electrode layer 5 are stacked in this order; the gate insulating film 6; the amorphous silicon film 7, which is a semiconductor film; the source Pole, drain electr...

Deformed example 1

[0130] Figure 5 It is a figure which shows the modification of the patterned shape of the stem wiring 13a.

[0131] Although not shown in the figure, it is preferable that the trunk lines 13a are formed in parallel straight lines with equal width and equal pitch.

[0132] In addition, the structure is such that the region where the main line 13a is connected to the branch line 13b is arranged in a lower layer of the main line 13a.

[0133] According to the above configuration, the interval W2 between the trunk lines 13a can be further reduced, and the increase in the peripheral region R2 where the signal line 13 for a gate drive circuit is formed can be further suppressed.

[0134] In addition, when a sealing material of the type cured by irradiating UV from the back surface of the TFT array substrate 1 is provided on the formation area of ​​the signal wiring 13 for the gate drive circuit, the above-mentioned equal width and equal intervals are formed as parallel straight li...

Deformed example 2

[0137] Figure 6 It is a figure which shows still another modification example of the main wiring 13a and the branch wiring 13b.

[0138] Such as Figure 6 As shown, it is preferable to provide a plurality of trunk wirings 13a, and the trunk wiring 13a disposed farthest from the gate driving circuit 11 among the trunk wirings 13a is located farther from the gate driving circuit 11. position, a second trunk line 15 is provided, and the second trunk line 15 and the second branch line 15a connecting the second trunk line 15 and the gate drive circuit 11 are formed in the same layer as the branch line 13b. The branch line 13 b is the same layer as the gate bus line GL and the gate electrode layer 5 .

[0139] The second main line 15 and the second branch line 15a do not intersect with the branch line 13b which is formed in the same layer as the gate electrode layer 5 in terms of their arrangement, so they can be connected with the branch line 15a. 13b, which is formed in the sa...

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Abstract

The dry wiring (13a) with a wider line width is arranged on a layer above the branch line (13b) with a narrower line width. In the area where the main line (13a) is electrically connected to the branch line (13b), the dry wiring The line (13a) and the branch line (13b) are overlapped in a plan view through the gate insulating film, and a contact hole is formed in the above-mentioned gate insulating film so that the branch line (13b) is exposed, and the main line (13a) and the branch line (13b) Electrically connected through the connection conductor provided in the contact hole. Therefore, it is possible to realize a TFT array substrate in which disconnection defects and abnormal line widths are less likely to occur, and expansion of the driver circuit area can be suppressed.

Description

technical field [0001] The present invention relates to an active matrix substrate on which a driving circuit and its wiring are formed monolithically, and an active matrix display device using the substrate. Background technique [0002] In recent years, active-matrix display devices using active elements such as TFTs, represented by liquid crystal display devices and organic EL display devices, which have been rapidly popularized instead of Braun tubes (CRTs), have the characteristics of energy saving, thinness, and lightness. , are widely used in televisions, monitors, mobile phones, and the like. [0003] Among them, in liquid crystal display devices equipped with small and medium-sized electronic devices such as mobile phones and notebook computers, in order to realize cost reduction, gate driver monolithic (GDM) technology using amorphous silicon has begun to be adopted, and the scope of its adoption has gradually expanded from Expand from small to large products such...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09F9/30G02F1/1368H01L29/786
CPCG02F1/13458H01L27/3241G09G3/3674G02F1/13452G09G3/3677H01L27/124H01L27/3276G02F1/13454H10K59/10H10K59/131
Inventor 吉田昌弘小笠原功田中信也
Owner SHARP KK
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