Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

A magnetic memory, anisotropic technology, applied in the direction of digital memory information, static memory, information storage, etc., can solve the problem of weak magnetization in the magnetization fixed area

Inactive Publication Date: 2012-05-30
RENESAS ELECTRONICS CORP
View PDF7 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the magnetic coupling between the data recording layer 110 and the magnetization fixed layers 115a and 115b may be broken by a thick non-magnetic layer inserted as an underlayer, resulting in weak magnetization of the magnetization fixed regions 111a and 111b.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film
  • Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film
  • Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0071] figure 2 It is a cross-sectional view schematically showing an exemplary configuration of the magnetoresistive element 100 in the first embodiment of the present invention. The magnetoresistance effect element 100 includes a data recording layer 10, a spacer layer 20, a reference layer 30, an underlayer 40, and magnetization fixed layers 50a and 50b.

[0072] The data recording layer 10 is formed of a ferromagnetic material having perpendicular magnetic anisotropy. The data recording layer 10 includes a region in which the magnetization direction can be reversed and data is stored in its magnetization state. In detail, the data recording layer 10 includes a pair of magnetization fixed regions 11 a and 11 b and a magnetization free region 13.

[0073] The magnetization fixed regions 11 a and 11 b are arranged adjacent to the magnetization free region 13. The magnetizations of the magnetization fixed regions 11a and 11b are fixed in opposite directions (or antiparallel). i...

no. 2 example

[0143] Picture 12 It is a cross-sectional view showing a schematic structure of a magnetoresistance effect element 100A of the second embodiment of the present invention. The magnetoresistance effect element 100A of the second embodiment is similar in structure to the magnetoresistance effect element 100 of the first embodiment. The difference lies in the underlying structure. In the first embodiment, as described above, the first magnetic underlayer 41 in the underlayer 40 is formed of an inherent ferromagnetic material, and has a thin thickness such that the first magnetic underlayer 41 does not exhibit ferromagnetism. On the other hand, in the second embodiment, the first magnetic underlayer 41A in the underlayer 40A is formed of a material that inherently exhibits in-plane magnetic anisotropy, but has a feature that makes the first magnetic underlayer 41A exhibit perpendicular magnetic anisotropy. That thickness (specifically, 0.5 to 3 nm). The first magnetic underlayer ...

no. 3 example

[0181] Figure 19A Is a cross-sectional view showing a schematic configuration of a magnetoresistance effect element 100B of the third embodiment of the present invention, and Figure 19B It is a cross-sectional view showing an exemplary configuration of the magnetic recording layer of the magnetoresistance effect element 100B of the third embodiment. It should be noted that Figure 19B Yes Figure 19A The cross-sectional view of the SS' section in.

[0182] The magnetoresistance effect element 100B of the third embodiment is similar in structure to the magnetoresistance effect element 100 of the first embodiment. The difference lies in the underlying structure. In the first embodiment, the underlayer 40 includes a first magnetic underlayer 41, a non-magnetic underlayer 42 and a second magnetic underlayer 43. On the other hand, in the third embodiment, the underlayer 40B does not include components corresponding to the second magnetic underlayer 43 of the first embodiment, but c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

Description

Technical field [0001] The present invention relates to a magnetic memory, and more particularly, to a magnetic memory using a magnetic film with perpendicular magnetic anisotropy (PMA) as a data recording layer in each memory cell. Background technique [0002] Magnetic memory or magnetic random access memory (MRAM) is a non-volatile memory that realizes high-speed operation and allows unlimited rewriting. This promotes the practical use of MRAM in specific applications and facilitates the development of multi-purpose extensions to MRAM. Magnetic memory uses a magnetic film as a storage element, and stores data as the magnetization direction of the magnetic film. When writing desired data into the magnetic film, the magnetization of the magnetic film is converted into a direction corresponding to the data. Various methods have been proposed to switch the direction of magnetization, but all of these proposed methods have the same in that they all use current (or write current)....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/15G11C11/16
CPCG11C11/16G11C11/161G11C11/02G11C11/15G01R33/098G01R33/091G11C11/14Y10T428/1143Y10T428/1114Y10T428/1121H10N50/85
Inventor 刈屋田英嗣末光克巳谷川博信森馨铃木哲广永原圣万尾崎康亮大岛则和
Owner RENESAS ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com