Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate

A technology of doped regions and silicon substrates, which is applied in the field of distinguishing a group of highly doped regions and a group of lightly doped regions on a silicon substrate, and can solve problems such as difficulties and alignment accuracy problems

A technology of doped regions and silicon substrates, which is applied in the field of distinguishing a group of highly doped regions and a group of lightly doped regions on a silicon substrate, and can solve problems such as difficulties and alignment accuracy problems

CN102484050AInactive Publication Date: 2012-05-30INNOVALIGHT
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  • Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
  • Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
  • Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate

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Embodiment 1

[0042] see Figure 4A -B, A set of graphs showing dopant concentration depth profiles and corresponding infrared (IR) electromagnetic radiation spectra transmitted through two locations on a substrate with different doping intensities.

[0043] Figure 4A Diagram showing dopant concentration as a function of depth for a silicon substrate in POCl 3 Partially processed with silicon nanoparticle ink in a diffusion furnace. Along the horizontal axis 402 is the depth in μm from the surface of the silicon substrate, while on the vertical axis 404 is shown in atoms / cm 3 The calculated phosphorus dopant concentration.

[0044] As previously mentioned, nanoparticles are microscopic particles having at least one dimension smaller than 100 nm. The term "Group IV nanoparticles" generally refers to particles that have an average diameter between about 1 nm and 100 nm and are composed of silicon, germanium, carbon, or combinations thereof. The term "group IV nanoparticles" also include...

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Abstract

A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.

Description

[0001] Cross references to related patent applications [0002] This patent application claims priority to US non-provisional patent application 12 / 544,713, filed August 20, 2009, which is hereby incorporated by reference in its entirety. field of invention [0003] The present disclosure generally relates to silicon substrates. More specifically, the present disclosure relates to methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate. Background of the invention [0004] Semiconductors form the basis of modern electronics. Semiconductors are indispensable in most modern electrical devices (eg, computers, cellular phones, photovoltaic cells, etc.) due to their physical properties that can be selectively modified and controlled between conduction and insulation. Group IV semiconductors generally refer to the first four elements in the fourth column of the periodic table: carbon, silicon, germanium, and tin. [0...

Claims

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Application Information

Patent Timeline
30 May 2012
Publication
CN102484050A
IPC
H01L21/22; C30B15/04; G01N21/35; G01N21/3563; G01N21/359
CPC
H01L22/12; G01N21/3563; G01J3/42; G01N21/9501; H01L21/22; C03B15/04
Inventors
M·克尔曼; G·斯卡尔德拉