Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate

A technology of doped regions and silicon substrates, which is applied in the field of distinguishing a group of highly doped regions and a group of lightly doped regions on a silicon substrate, and can solve problems such as difficulties and alignment accuracy problems

Inactive Publication Date: 2012-05-30
INNOVALIGHT
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with sequential deposition steps, each deposition tool needs to base all calculations on the same precise edge location, which can be difficult, especially in high-throughput manufacturing processes
Also, alignment accuracy can be problematic as substrate edge geometries tend to be non-ideal and poorly defined

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
  • Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
  • Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] see Figure 4A -B, A set of graphs showing dopant concentration depth profiles and corresponding infrared (IR) electromagnetic radiation spectra transmitted through two locations on a substrate with different doping intensities.

[0043] Figure 4A Diagram showing dopant concentration as a function of depth for a silicon substrate in POCl 3 Partially processed with silicon nanoparticle ink in a diffusion furnace. Along the horizontal axis 402 is the depth in μm from the surface of the silicon substrate, while on the vertical axis 404 is shown in atoms / cm 3 The calculated phosphorus dopant concentration.

[0044] As previously mentioned, nanoparticles are microscopic particles having at least one dimension smaller than 100 nm. The term "Group IV nanoparticles" generally refers to particles that have an average diameter between about 1 nm and 100 nm and are composed of silicon, germanium, carbon, or combinations thereof. The term "group IV nanoparticles" also include...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.

Description

[0001] Cross references to related patent applications [0002] This patent application claims priority to US non-provisional patent application 12 / 544,713, filed August 20, 2009, which is hereby incorporated by reference in its entirety. field of invention [0003] The present disclosure generally relates to silicon substrates. More specifically, the present disclosure relates to methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate. Background of the invention [0004] Semiconductors form the basis of modern electronics. Semiconductors are indispensable in most modern electrical devices (eg, computers, cellular phones, photovoltaic cells, etc.) due to their physical properties that can be selectively modified and controlled between conduction and insulation. Group IV semiconductors generally refer to the first four elements in the fourth column of the periodic table: carbon, silicon, germanium, and tin. [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/22C30B15/04G01N21/35G01N21/3563G01N21/359
CPCH01L22/12G01N21/3563G01J3/42G01N21/9501H01L21/22C03B15/04
Inventor M·克尔曼G·斯卡尔德拉
Owner INNOVALIGHT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com