Electrostatic chuck and plasma device therewith

Abstract

The invention provides an electrostatic chuck. The electrostatic chuck comprises a chuck body, an electrode layer, a conducting piece, a plurality of convex parts, a boss and a conducting layer, wherein the chuck body is provided with an air inlet hole and an installing hole; the electrode layer is arranged in the chuck body; the conducting piece is fixedly arranged in the installing hole; the convex parts are arranged on the upper surface of the chuck body, and a gas channel is formed on the upper surface of the chuck body and is communicated with the air inlet hole; the boss is arranged on the upper surface of the chuck body; the conducting layer is arranged on the upper surface of the boss and is electrically connected with the conducting piece; and the upper surface of the conducting layer is level to the upper surfaces of the convex parts. According to the embodiment of the invention, by the boss and the conducting layer arranged on the upper surface of the chuck body, the conducting piece can be fully contacted with a chip; and since the boss and the conducting layer provide a larger contact surface, the diameter of the conducting piece can be reduced, so that the generation of enough adsorptive force for the chip by the electrostatic chuck can be ensured.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an electrostatic chuck and a plasma device with the electrostatic chuck. Background technique [0002] In the integrated circuit manufacturing process, especially in plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes, in order to fix, support and transfer the wafer and realize temperature control, avoid in the process If there is movement or misalignment in the wafer, a chuck is often used to hold the wafer. Due to the irreparable damage to the wafer caused by mechanical reasons such as pressure and collision, the electrostatic chuck has gradually replaced the traditional mechanical chuck. [0003] A typical electrostatic chuck usually consists of two parts, an insulating layer and an aluminum base. The insulating layer is currently manufactured by processing ceramic materials, or in the form of ceramic spraying,...

AI Technical Summary

Problems solved by technology

The disadvantage of the prior art is that due to the objective reason that the insulating layer of the conductive hole 1100' and the electrostatic chuck 1000' are made of different materials, the processing is difficult and the cost is high; in addition, if the conductive hole 1100' and the wafer are to be reliably connected contact, it is necessary to increase the diameter of the conductive hole 1100'

However, since the conductive hole 1100' cannot produce an adsorption force on the wafer on the electrostatic chuck 1000', the increase in the diameter of the conductive hole 1100' will significantly reduce the adsorption force of the electrostatic chuck 1000' to the wafer.

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