Check patentability & draft patents in minutes with Patsnap Eureka AI!

Vacuum sensor

A vacuum sensor and micro-electrode technology, applied in the field of vacuum sensors, can solve the problems of difficult judgment of field emission threshold and high working voltage, and achieve excellent field emission performance and easy measurement

Active Publication Date: 2012-06-13
SHANGHAI JIAO TONG UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But its disadvantage is that the operating voltage of this sensor is relatively high, requiring dozens of volts to hundreds of volts, and the field emission threshold is difficult to judge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum sensor
  • Vacuum sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The structure and composition of this embodiment are as figure 1 Shown, wherein the substrate 1 is a glass substrate; the anode 2 is a gold microelectrode. The cathode 3 is covered with single-walled carbon nanotubes, and the voltage between the cathode 3 and the anode 2 is 3 volts.

Embodiment 2

[0023] The structure and composition of this embodiment are as figure 1 As shown, the substrate 1 is high-resistance silicon; the anode 2 is a silver microelectrode. The cathode 3 is covered with zinc oxide nanowires, and the voltage between the cathode 3 and the anode 2 is 10 volts.

[0024] In a further embodiment, the above-mentioned implementation manner may also be in the form of a micro-electrode array composed of the above-mentioned micro-electrodes.

[0025] It should be pointed out that the vacuum sensor according to the present invention can be used not only for measuring the internal vacuum degree of a vacuum device with a small volume, but also for measuring the vacuum degree of a larger vacuum chamber.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

The invention discloses a vacuum sensor, which comprises a substrate of which the surface is insulated, and a positive pole microelectrode and a negative pole microelectrode which are arranged on the substrate, wherein the positive pole microelectrode and the negative pole microelectrode are connected with respective electrode leads; and a one-dimensional nano material is covered on a negative pole. The one-dimensional nano material has excellent field emission performance, large current can be generated under low direct current voltage, and the vacuum sensor is safe and is convenient to measure.

Description

technical field [0001] The invention belongs to the field of vacuum sensors, in particular to a miniature vacuum sensor. Background technique [0002] With the wide application of vacuum microelectronic devices, more and more microelectronic devices and micromechanical systems need to work in a vacuum environment, and the requirements for vacuum degree are getting higher and higher. However, the existing vacuum packaging technology will have a certain residual pressure, and there will be a problem of sealing failure over time. However, the vacuum inside the package cannot be measured, so it will not be possible to ensure whether these microelectronics and micromechanical systems are in their place. Work in a designed work environment. If miniature vacuum sensors can be integrated into these microelectronic devices and micromechanical systems, the vacuum degree of the working environment of these devices can be monitored at any time, so that it can be known whether these vac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L21/30
Inventor 张亚非回兵徐航徐东魏浩
Owner SHANGHAI JIAO TONG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More