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Alloying method for prolonging service life of gallium arsenide light-emitting diode (LED)

A technology of gallium arsenide and alloy, which is applied to the alloy that prolongs the life of GaAs LED, and the field of prolonging the life of GaAs LED, can solve the problems of insufficient brightness, affecting the electrical conductivity, poor contact, etc. Excellent performance, electrical conductivity, cost saving effect

Active Publication Date: 2014-01-08
CHONGQING PINGWEI ENTERPRISE
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] After long-term follow-up observation and research, it is found that the alloying method of the above-mentioned gallium arsenide LED has its shortcomings. Due to the one-time fast alloying, the fusion effect between the metal layer and the gallium arsenide body is not good, so that the connection part after alloying Insufficient compactness, there will be problems such as weak connection and pores on the surface. With the increase of use time, these problems will gradually be exposed, specifically reflected in: On the one hand, the adhesion between the metal layer and the gallium arsenide body Not strong enough, after the product has been used for a period of time, there may be looseness between the metal layer and the gallium arsenide body, resulting in poor contact, inability to emit light or unstable light emission, and damage the product; on the other hand, as the use time increases , the surface of the metal layer and the gallium arsenide body may produce a thin film that affects the conductivity, thereby affecting the conductivity, reducing the luminous efficiency and insufficient brightness
To sum up, the existing gallium arsenide LED has a short lifespan due to its primary fast alloying, which indirectly increases the cost of use, and also increases or decreases the amount of electronic waste generated, which is not conducive to environmental protection

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  • Alloying method for prolonging service life of gallium arsenide light-emitting diode (LED)
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Embodiment Construction

[0015] Below in conjunction with accompanying drawing, the present invention is described in further detail:

[0016] Such as figure 1 As shown, the alloying process in the present invention is carried out between the metal layer 1 and the gallium arsenide body 3 , and the alloy layer 2 is produced after alloying, and the alloy layer 2 is the connection part between the metal layer 1 and the gallium arsenide body 3 .

[0017] combine figure 1 and figure 2 , the present invention includes the following secondary alloys: the first alloy is carried out in a vacuum environment in an evaporation table (not shown in the figure), and after metal evaporation treatment is performed on gallium arsenide, the substrate of the evaporation table is used to heat, and the The first constant temperature alloy; the second alloy is carried out outside the evaporation table, and the second constant temperature alloy is carried out after the photolithography treatment of gallium arsenide.

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Abstract

The invention discloses an alloying method for prolonging service life of a gallium arsenide light-emitting diode (LED), which includes the following two-time alloying. The first alloying is conducted in a vacuum environment inside an evaporation table, after evaporation metallizing is processed on gallium arsenide, a lining of the evaporation table is used for heating, and the first constant temperature alloying is performed. The second alloying is conducted outside the evaporation table, and after photoetching is processed on gallium arsenide, the second constant temperature alloying is performed. By adopting two-time alloying, cohesive force of a metal layer and a gallium arsenide body is enhanced, and furthermore electricity conductive performance of surfaces of the metal layer and the gallium arsenide body are better and not apt to produce thin films which affect electricity conductive performance. Therefore, defects that cohesive performance and electricity conductive performance of a traditional gallium arsenide LED weaken along with time are overcome, service life of the gallium arsenide LED is prolonged, use cost is indirectly saved, production quantity of electronic wastes is reduced, and environment protection is facilitated.

Description

technical field [0001] The invention relates to a method for prolonging the service life of a gallium arsenide LED, in particular to an alloy method for prolonging the service life of a gallium arsenide LED, which belongs to the production field of the gallium arsenide LED. Background technique [0002] Gallium arsenide LEDs are gallium arsenide light-emitting diodes, which are mainly used to generate red or infrared light. In the production process of gallium arsenide LED, the metal lead-out electrode, and the alloy of the electrode and gallium arsenide (used to improve the contact state and adjust the forward voltage) are very critical processes. An alloy is a substance that has metallic properties by fusing (physically changing) two or more metals (or metals and nonmetals). [0003] At present, the alloys of electrodes and gallium arsenide, such as gold-antimony alloy and gold-arsenide alloy, all use a rapid alloy of 10-20S at 420°C, and the whole process is carried out ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/36
Inventor 王兴龙李述州
Owner CHONGQING PINGWEI ENTERPRISE