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Complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber

A technology of optical carrier wireless communication and driving circuit, applied in the field of wireless communication, can solve the problems of different laser driving circuits with little pre-distortion, and it is difficult to meet the high-frequency and high-speed requirements of 4G wireless communication, and achieve controllable pre-distortion amplitude. , a wide range of effects

Inactive Publication Date: 2012-06-13
TIANJIN UNIV
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Problems solved by technology

[0004] At present, commercial laser drive circuits rarely have pre-distortion parts, or it is difficult to meet the high-frequency and high-speed requirements of 4G wireless communication, and general lasers have a certain degree of nonlinearity, and this nonlinearity varies with different lasers. The material, process and working temperature are different

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  • Complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber
  • Complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber
  • Complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber

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Embodiment Construction

[0023] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] figure 1 The block diagram of the shown laser drive circuit with predistortion function consists of the following: CMOS analog, DC blocking matching network in the RF part, buffer, main and auxiliary amplifiers, modulation current output array, DC current output array and The low-noise interest-bearing reference bias circuit is all manufactured by the standard CMOS0.18um process according to the analog and radio frequency circuit design process. The test circuit in the CMOS digital part, the nonlinear predistortion, the modulation efficiency control circuit and the power control circuit are all made by the standard CMOS0. The 18um process is manufactured according to the ASIC design process, and the ADC is manufactured using the stand...

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Abstract

The invention discloses a complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber and relates to the field of radio communication. The CMOS laser driving circuit for the 4G radio-over-fiber is formed by connecting a CMOS analog radio frequency part, a CMOS digital part, an analog-to-digital converter and a laser with a photoelectric detector. The CMOS laser driving circuit for the 4G radio-over-fiber is designed by using an MOS which is low in power consumption and easy to integrate, has an analog pre-distortion function of correcting the non-linearity of the laser, and meets requirements of a standard of new generation (4G) radio communication time-division long term evolution (TD-LTE).

Description

technical field [0001] The invention relates to the field of wireless communication, in particular to a CMOS laser drive circuit for 4G optical wireless communication. Background technique [0002] In October 2010, the International Telecommunication Union (ITU) determined TD-LTE-Advanced as the fourth generation mobile communication (4G) international standard. In April 2011, the Ministry of Industry and Information Technology officially approved the 50M frequency between 2570MHz-2620MHz to be used by TD-LTE in my country. In order to solve the loss problem of high-frequency signal propagation and the requirement of frequency utilization efficiency, a ROF technology that combines the technical characteristics of low loss and wide bandwidth of optical fiber with the convenience and flexibility of wireless communication system came into being. Among them, wireless communication and optical fiber interface chip technology, that is, laser drive circuit design, is one of the ke...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/09
Inventor 毛陆虹李建恒张世林谢生
Owner TIANJIN UNIV