Check patentability & draft patents in minutes with Patsnap Eureka AI!

Optical detection method and computer-aided system for plasma etching structure

A computer-aided, optical detection technology, applied in the direction of optical devices, semiconductor/solid-state device testing/measurement, measurement devices, etc., can solve the problem of inability to obtain data related to etched structures

Active Publication Date: 2012-06-27
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen from its principle that IEP is only limited to the in-situ real-time measurement of the thickness of the light-transmitting film, and cannot obtain more relevant data of the etched structure.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical detection method and computer-aided system for plasma etching structure
  • Optical detection method and computer-aided system for plasma etching structure
  • Optical detection method and computer-aided system for plasma etching structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Preferred embodiments of the present technology will be explained with reference to the drawings.

[0025] By applying the improved optical detection scheme, the present invention introduces the incident light through the polarization-maintaining optical fiber to complex structures (such as periodically arranged trenches or through-hole array structures) in the dry etching process of semiconductor manufacturing and performs in-situ real-time detection of the reflection spectrum. The collection; and then analyze and fit it through the computer-aided system, so as to obtain important data such as its key size, etching depth and slope, which are used to guide the etching process to obtain the best etching results.

[0026] Therefore, according to one embodiment of the present invention, as figure 1 As shown, the optical detection method for plasma etching structure of the present invention comprises the following steps:

[0027] In the first step S1, the incident light fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an optical detection method and computer-aided system for a plasma etching structure. The optical detection method comprises the following steps of: (S1) processing incident light from a light source into parallel polarized light, transmitting the parallel polarized light through a polarization maintaining optical fiber of an electrode, which is arranged on an etching machine table, and realizing vertical incidence of the parallel polarized light onto the structure to be measured; (S2) leading out reflected light on the structure to be measured via the polarization maintaining optical fiber and collecting a spectrum of the reflected light; and (S3) sending the collected spectrum to the computer-aided system to process so as to get actual parameters which are related to the structure to be measured. According to the optical detection method and computer-aided system disclosed by the invention, more related data of the etching structure can be obtained.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an optical detection method and a computer aided system for plasma etching structures. Background technique [0002] At present, for the acquisition of in-situ real-time data of plasma etching, a technology called IEP (Interferometry End Point) is widely used in the industry, that is, the technology of optical interference end point setting, also known as optical interference technology, and its principle is The thickness of the film is measured by using the coherence phenomenon between two homologous beams formed by the reflection of a beam on the upper and lower interfaces of the film. It can be seen from its principle that IEP is only limited to the in-situ real-time measurement of the thickness of the light-transmitting film, and cannot obtain more relevant data of the etched structure. Contents of the invention [0003] In order to solve the above problems, the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01B11/02G01B11/22H01L21/66
Inventor 李程张瑜杨渝书
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com