Thin film scandium-tungsten cathode and preparation method thereof

A tungsten cathode and cathode technology, which is applied in thermionic cathode manufacturing, electrical components, discharge tube/lamp parts, etc., can solve the problems of complex film forming process and poor controllability, and achieve uniform distribution

Inactive Publication Date: 2012-06-27
NO 12 RES INST OF CETC
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  • Abstract
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Problems solved by technology

[0007] The technical problem to be solved in the present invention is aimed at the complexity and poor controllability of scandium-containing thin

Method used

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  • Thin film scandium-tungsten cathode and preparation method thereof
  • Thin film scandium-tungsten cathode and preparation method thereof
  • Thin film scandium-tungsten cathode and preparation method thereof

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Embodiment Construction

[0021] refer to figure 1 , showing a schematic diagram of the structure of a thin-film scandium-tungsten cathode, 1 in the figure shows the cathode substrate, which is a conventional porous tungsten substrate with aluminate added, and a scandium-tungsten coating film 2 is synthesized on the top surface of the surface, and the lower part is a molybdenum shielding cylinder 3. Inside the shielding cylinder is the thermal subassembly 4. refer to figure 2 , represents the process flow diagram of the thin-film scandium-tungsten cathode preparation method, and its specific implementation is operated according to the following steps:

[0022] a. Preparation of cathode substrate;

[0023] b. Assemble the cathode substrate and the molybdenum support cylinder;

[0024] c. The assembled cathode is impregnated with an active emission material, wherein the molar ratio of the active material is BaO: CaO: Al 2 o 3 =6:1:2;

[0025] d. Cathodic surface treatment to remove residual salt o...

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Abstract

The invention discloses a thin film scandium-tungsten cathode and a preparation method thereof, and the thin film scandium-tungsten cathode and the preparation method thereof belong to the field of microwave vacuum electronic apparatuses. The thin film scandium-tungsten cathode comprises a cathode matrix; a molybdenum shielding barrel is arranged at the lower part of the matrix; a heater assembly is arranged in the shielding barrel; and a synthetic scandium-tungsten covering film is arranged on the surface of the top of the cathode matrix. The preparation method of the thin film scandium-tungsten cathode comprises the following steps: preparing the cathode matrix, assembling the cathode matrix with the molybdenum shielding barrel, dipping an active emitting substance, processing the surface of the cathode, and sputtering a scandium-tungsten film in a direct current way. By using the cathode prepared by the method, the electron emission capacity is increased beneficially, and the emission uniformity is improved.

Description

technical field [0001] The invention belongs to the field of microwave vacuum electronic devices, and in particular relates to a thin-film scandium-tungsten cathode used in a high current density cathode and a preparation method thereof. Background technique [0002] Among many thermionic emission cathodes, scandate cathodes currently have a relatively high emission level, and its low-temperature and high-current characteristics are obvious, but its emission non-uniformity, poor process repeatability, and insufficient ion bombardment resistance are constraints. Widely used scandate cathodes in microwave vacuum electronic devices. [0003] In order to overcome the above-mentioned shortcomings of the poor ion bombardment resistance of ordinary scandate cathodes, in the prior art, cathode researchers have developed a top-layer scandate cathode structure. According to different development methods and processes, this type of cathode can be divided into two types: "pressed type"...

Claims

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Application Information

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IPC IPC(8): H01J1/146H01J9/04
Inventor 王萍王舒墨李季
Owner NO 12 RES INST OF CETC
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