Photoetching illumination system
A lighting system and optical system technology, which is applied in the field of semiconductor manufacturing, can solve the problems of affecting yield, energy inconsistency, uniformity change of dose control sensor, etc., and achieve the effect of increasing yield and saving exposure time
Active Publication Date: 2014-02-19
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology
Although this method can control the dose better, it faces the problem of recalibration when changing the lighting mode or changing the lighting power
Because the change of illumination mode will cause the angle of the energy received on the dose control detector to be different from the angle of energy received on the silicon wafer or substrate, the general detector is sensitive to the change of angle, which leads to The calibrated dose control sensor cannot truly reflect the actual exposure dose in another lighting mode and needs to be re-calibrated
In addition, power changes may cause changes in the uniformity of the location of the dose control sensor, which will also cause inconsistencies with the energy received on the silicon wafer or substrate, which also requires recalibration
This takes exposure time and affects yield
Method used
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[0024] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0025] The illumination system of a scanning or stepping lithography system includes an exposure light source 1 , a condenser lens 4 , a uniform light system 5 , a relay system, a dose control unit 10 and a mask 7 . Such as figure 2 As shown, the exposure light source 1 can be a continuous light source mercury lamp, or a discontinuous light source 193nm or 248nm laser. For example, when the exposure light source 1 is a mercury lamp, the light enters the condenser lens 4 through the ellipsoidal reflector 2 and the cold mirror 3 . Condenser 4 is a zoom lens group that can produce ring lighting and traditional lighting, and the condenser can also be a zoom lens that produces quadrupole or two-pole illumination. The light passes through the condenser 4 to form the required illumination pattern 11, and then enters the uniform light system 5. The...
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Abstract
The invention discloses a photoetching illumination system, which comprises a light source, a collecting mirror, a light homogenizing system, relay lens groups, a reflector, a dosage control unit and a mask. Light respectively enters the dosage control unit and the mask after passing through the reflector. The photoetching illumination system is characterized in that the same relay lens groups are respectively arranged in front of the dosage control unit and the mask, so that illuminance on the dosage control unit and illuminance on the mask have a very good linear relation. According to the photoetching illumination system disclosed by the invention, when an illumination mode needs to be converted, the dosage control unit does not need to be recalibrated, thereby, the exposure time is saved, and the yield is increased.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a lithography illumination system. Background technique [0002] The stepping or scanning lithography machine images the pattern on the mask plate to the silicon wafer of the IC process or the substrate of the LCD process through the optical system, and then makes the chip or the substrate driving circuit through the lithography process of soft baking and development. With the development of large-scale integrated circuits, the resolution requirements of lithographic imaging are getting higher and higher, and the requirements for lithography processes are also getting higher and higher. One of the most important steps in the photolithography process is how to precisely control the exposure dose, so that the exposure lines on the silicon wafer or substrate are better suited to the performance of the photoresist. The exposure dose control in the prior art gener...
Claims
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IPC IPC(8): G03F7/20G02B27/00G02B3/00
Inventor 张祥翔
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD