Transparent conductive film with enhanced thermal stability and application thereof

A technology of transparent conductive film and thermal stability, which is applied to the conductive layer, circuit, electrical components and other directions on the insulating carrier, and can solve the problem of poor thermal stability of OMO transparent conductive film

Active Publication Date: 2012-07-04
EAST CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention solves the problem of poor thermal stability of the OMO transparent con

Method used

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  • Transparent conductive film with enhanced thermal stability and application thereof
  • Transparent conductive film with enhanced thermal stability and application thereof
  • Transparent conductive film with enhanced thermal stability and application thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0041] Such as figure 1 As shown, the transparent conductive film of this embodiment consists of a substrate 1, a first oxide layer 21, a first heavily doped layer 31, a metal layer 4, a second heavily doped layer 32, and a second oxide layer from bottom to top. Layer 22 composition. Wherein, the first oxide layer 21 is ZnO, the first heavily doped layer 31 is aluminum, the metal layer 4 is silver, the second heavily doped layer 32 is aluminum, and the second oxide layer 22 is ZnO. A single specific material is given here, without limiting the selection of other materials, but for better illustrating the present invention.

[0042] The electrical conductivity between the first oxide layer 21 and the metal layer 4 and between the second oxide layer 22 and the metal layer 4 is higher than the electrical conductivity inside the first oxide layer 21 and the second oxide layer 22 . For example, in the transparent conductive film with the above-mentioned structure of ZnO|Al|Ag|Al|...

Embodiment 2

[0045] Such as figure 2 As shown, the transparent conductive film of this embodiment is composed of a substrate 1 , a first heavily doped layer 31 , a metal layer 4 , a second heavily doped layer 32 and a second oxide layer 22 from bottom to top. Wherein, the first heavily doped layer 31 is heavily aluminum-doped ZnO, the metal layer 4 is gold or silver, the second heavily doped layer 32 is heavily aluminum-doped ZnO, and the second oxide layer 22 is ZnO. A single specific material is given here, without limiting the selection of other materials, but for better illustrating the present invention. If the second oxide layer 22 is a degenerate semiconductor layer, such as ITO, AZO, and FTO, the transparent conductive film of this embodiment can be used as the cathode and anode of the photoelectric device.

Embodiment 3

[0047] image 3 It is a schematic diagram of a transparent conductive film of the present invention made of specific materials and its application in OSC batteries. The specific materials listed in this embodiment do not limit the selection of other materials and film structures in the present invention, but are just for illustrating the present invention more clearly. The structure of the transparent conductive film and the OSC battery of this embodiment consists of the substrate 1 glass (thickness 1mm), the first oxide layer 21 AZO (thickness 10nm), and the first heavily doped layer 31 aluminum (thickness 0.8nm) from bottom to top. , metal layer 4 silver (thickness 12nm), second heavily doped layer 32 aluminum (thickness 0.8nm), second oxide layer 22 AZO (thickness 40nm), hole transport layer 6NiO (thickness 15nm), P3HT:PCBM Mixed layer 19 (mixed layer of polythiophene and fullerene) (thickness 200nm) and cathode 8 aluminum (thickness 150nm).

[0048] The square resistance o...

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Abstract

The invention discloses a transparent conductive film with enhanced thermal stability and an application thereof, belonging to the field of photoelectric devices. The transparent conductive film with enhanced thermal stability provided by the invention successively comprises a substrate, a first oxide layer, a first heavily doped layer, a metal layer, a second heavily doped layer and a second oxide layer from bottom to top. The invention also provides an application of the transparent conductive film in photoelectric devices. The resistivity of the transparent conductive film is reduced by introducing heavily doped layers between the metal layer and the oxide layers of the transparent conductive film, and the thermal stability of the transparent conductive film is improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and in particular relates to a transparent conductive film with enhanced thermal stability and its application in optoelectronic devices. Background technique [0002] Transparent conductive oxides (TCO) represented by tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO) films usually have a band gap, high light transmittance in the visible spectrum, and resistivity. Low common optoelectronic properties are widely used in solar cells, flat panel displays, special functional window coatings and other optoelectronic devices. In recent years, oxide-metal-oxide (ie OMO, such as ITO|Ag|ITO, ZnO|Ag|ZnO, AZO|Ag|AZO, NiO|Ag|NiO, SnO 2 |Ag|SnO 2 etc.) Transparent conductive films have been extensively studied and gradually applied to optoelectronic fields such as solar cells and displays. In practical applications, transparent conductive films not only r...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01L31/0224
Inventor 陈晓红周琳朱峰孙卓
Owner EAST CHINA NORMAL UNIVERSITY
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