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Anode assembly and electroplating device for electroplating

A technology of anode components and anodes, which is applied in the direction of electrodes, circuits, semiconductor devices, etc., can solve the problems of thick electroplating layer deposition thickness, high resistance deviation, and particle residue, so as to reduce the difference in deposition thickness, ensure uniformity, and improve quality effect

Active Publication Date: 2015-03-18
NANTONG FUJITSU MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the higher the Fe density near the contact pin 25a, the higher the current density, and the thicker the electroplating layer deposition thickness in the surrounding area of ​​the semiconductor wafer 2, which in turn induces peeling and particle residue in subsequent processes.
The uneven thickness of the conductive layer on the semiconductor wafer also tends to further deteriorate the process and make the resistance deviation higher
[0007] Similarly, in other electroplating devices of the prior art, there is also the defect that the deposition thickness of the electroplating layer in the central area of ​​the wafer is thin, and the deposition thickness of the electroplating layer in the surrounding area is thick.
Especially when the size of the wafer is larger than 8 inches, the above defects are more obvious

Method used

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  • Anode assembly and electroplating device for electroplating
  • Anode assembly and electroplating device for electroplating
  • Anode assembly and electroplating device for electroplating

Examples

Experimental program
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Effect test

Embodiment 1

[0044] refer to image 3 As shown, this embodiment provides an electroplating device, including:

[0045] chemical plating tank, including plating tank 110;

[0046] The substrate fixing device 130 is used for fixing the semiconductor wafer 140, and the to-be-plated surface of the semiconductor wafer 140 is disposed opposite to the anode panel 120;

[0047] The power supply 150 is used to provide a negative output and a positive output, the negative output is connected to the semiconductor wafer 140, and the positive output is connected to the anode assembly for electroplating;

[0048]The anode assembly for electroplating includes: an anode panel 120; a plurality of support wires 160, the first ends of the support wires 160 are fixed on the edge area of ​​the anode panel 120; the support rods 170, one end of the support rods 170 is fixed on the anode panel 120 In the middle area of ​​​​the support rod 170 is provided with a sliding device 180 and a stop device 190, the seco...

Embodiment 2

[0067] refer to Figure 5 As shown, in this embodiment, a baffle 220 may also be provided at the edge region of the anode panel 120 . The material of the baffle 220 can be any insulating material, so that the baffle 220 can reduce the electric power line between the anode panel 120 and the edge region of the semiconductor wafer 140 . At this time, the bending angle of the anode panel 120 can be reduced.

[0068] In this embodiment, the baffle 220 is a rectangular parallelepiped, which can be fixed by hanging. It should be noted that, in other embodiments of the present invention, the baffle plate 220 may also be a curved arc-shaped structure, which may also be fixed by being pasted on the anode panel 120 or fixed by other means.

[0069] In the above-mentioned electroplating process, not only the distance between the anode panel 120 and the semiconductor wafer 140 is increased from the middle region to the edge region in order to make up for the defect that the density of el...

Embodiment 3

[0071] Incorporate references Image 6 As shown, in this embodiment, on the premise of keeping the anode panel 120 bent, the anode panel 120 can be a multi-layer concentric circle structure. At this time, the power supply 150 needs to provide a plurality of different positive outputs, each circle The rings connect the different positive outputs. Preferably, the positive electrode voltage corresponding to the positive electrode output decreases sequentially from the center of the concentric circle structure outward. At this time, the bending angle of the anode panel 120 can be reduced.

[0072] As a concrete example, with reference to Image 6 As shown, the anode panel 120 includes three layers of concentric circles 121, 122 and 123, each concentric circle is respectively connected to a different positive output of the power supply 150, the positive voltage received by the concentric circle 121 is V1, and the positive voltage received by the concentric circle 122 is V1. The ...

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Abstract

The invention discloses an anode assembly and an electroplating device for electroplating. The anode assembly for electroplating comprises an anode panel, a plurality of supporting wires, and a support bar, wherein the first end of the supporting wires is fixed at the edge area of the anode panel, one end of the support bar is fixed at the central area of the anode panel, the support bar is provided with a sliding unit and a stopping unit, the second end of the supporting wires is fixed on the sliding unit, the second end of the supporting wires moves as the sliding unit moves, and when the sliding unit is fixed by the stopping unit, the supporting wires bend the anode panel. According to the invention, a uniform metal layer or film can be formed on the central area and surrounding area of a semiconductor wafer to finally improve the quality of electroplating.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to an anode assembly for electroplating and an electroplating device. Background technique [0002] In the fabrication of integrated circuit (IC) semiconductor devices, the uniformity of the substrate surface is critical, especially as the density of components increases and the size shrinks to the sub-micron scale. Generally, the metal layer is used as the connection of individual components in the IC, and the metal line is separated by a dielectric layer or an insulating layer, and interconnect structures such as trenches, contact holes, and contacts are formed between the dielectric layers to provide conductive metal layers. circuit channel. [0003] In the prior art, the interconnect structure is mainly made of copper or copper alloy. Specifically, the metal layer or film of copper or copper alloy can be deposited by the following methods: physical vapor dep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D17/12C25D7/12
Inventor 丁万春
Owner NANTONG FUJITSU MICROELECTRONICS