Memory and method for operating the same

Abstract

Memory devices and methods for operating such devices are described which can effectively program the metal-oxide memory elements in an array, while also avoiding applying unnecessarily high voltage pulses. Programming operations described herein include applying a lower voltage pulse across a metal-oxide memory element to establish a desired resistance state, and only applying a higher voltage pulse when the lower voltage pulse is insufficient to program the memory element. In doing so, issues associated with applying unnecessarily high voltages across the memory element can be avoided.

Description

technical field [0001] The present invention relates to metal oxide memory devices, and methods of operating such metal oxide memory devices. Background technique [0002] Application of electrical pulses at levels appropriate to implementation in the integrated circuit can cause the metal oxide to change resistance within two or more suitable ranges. Because of the simple structure of metal oxides, compatibility with standard complementary metal-oxide-semiconductor (CMOS) processes, high speed, low power consumption, and the potential for 3D stacking, metal oxides are used in resistive random access memory ( The application of resistive random access memory (RRAM) devices has received attention. [0003] Tungsten Oxide WO x The substrate-based RRAM has exhibited good resistance-switching properties in two or more resistance ranges. Reference may be made to US Patent No. 7,800,094, titled [Memory Device with Embedded Resistive Memory Containing Tungsten Compound and Metho...

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Problems solved by technology

These variations can reduce the resistive window, creating data reliability issues, and possible device failure

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