Stress adjusting method used in manufacturing process of indium-gallium-aluminum-nitrogen-based light emitting device
A technology of indium gallium aluminum nitrogen and stress adjustment, which is applied in semiconductor devices, electrical components, circuits, etc.
Active Publication Date: 2012-07-25
LATTICE POWER (JIANGXI) CORP
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- Abstract
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Problems solved by technology
[0004] Non-polar or semi-polar InGaAlN thin film, although it can solve the problem of the influence of stress on luminous efficiency, it will introduce a new stress problem of thermal expansion and contraction
Method used
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Embodiment Construction
[0025] The invention provides a stress adjustment method in the manufacturing process of an InGaAlN-based light-emitting device, which comprises: forming an InGaAlN thin film on a growth substrate; The coefficient is smaller than or larger than the stress adjusting rib of the InGaAlN thin film, and the stress adjusting rib weakens the variation trend of the stress generated by the subsequent processing on the InGaAlN thin film.
[0026] The result of weakening the variation trend of the stress can be used to maintain the stress of the InGaAlN thin film, for example, the InGaAlN thin film is subjected to tensile stress in subsequent steps, and the compressive stress given to the InGaAlN thin film by the stress adjustment rib is equal to the The tensile stress keeps the InGaAlN thin film in its original stress state; it can also be used to adjust the stress of the InGaAlN thin film.
[0027] For example, the InGaAlN thin film is subject to tensile stress in subsequent steps, and...
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Abstract
The invention discloses a stress adjusting method used in the manufacturing process of an indium-gallium-aluminum-nitrogen-based light emitting device, and relates to an indium-gallium-aluminum-nitrogen-based semi-conductor light emitting device. The method is used for releasing and adjusting the stress of an indium-gallium-aluminum-nitrogen thin film, so that the photoelectric performance and the reliability of the device are improved. The method comprises the following steps: the indium-gallium-aluminum-nitrogen thin film is formed on a growth substrate; a stress adjusting rib is formed on the indium-gallium-aluminum-nitrogen thin film, wherein the stress adjusting rib is imaged, and the expansion coefficient of the stress adjusting rib is smaller than or larger than that of the indium-gallium-aluminum-nitrogen thin film, and due to the stress adjusting rib, the changing trend of the stress to the indium-gallium-aluminum-nitrogen thin film caused by the subsequent processing can be weakened. The imaged stress adjusting rib is arranged on the indium-gallium-aluminum-nitrogen thin film provided by the invention, and is attached on the surface of the indium-gallium-aluminum-nitrogen thin film, and has enough thickness for affecting the stress of the indium-gallium-aluminum-nitrogen thin film. The stress adjusting rib selects the materials with adaptive coefficient of thermal expansion according to the manufacturing demands.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to an indium-gallium-aluminum-nitride-based semiconductor light-emitting device. Background technique [0002] At present, the growth substrates of InGaAlN light-emitting devices that are commercialized are all heterogeneous growth substrates, and there are mainly three types: sapphire substrates, silicon carbide substrates, and silicon substrates; although other substrates can also be used for Epitaxial InGaAlN thin films have not been commercialized yet; although homogeneous growth substrates can also be made into light-emitting devices, the cost of homogeneous growth substrates is very high and commercialization is not yet mature. [0003] There is a difference in linear thermal expansion coefficient between the InGaAlN thin film and the heterogeneous substrate. The temperature for the epitaxial growth of the InGaAlN thin film is generally around 1000°C. Due to...
Claims
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Login to View More IPC IPC(8): H01L33/00H01L33/12
Inventor 熊传兵赵汉民江风益
Owner LATTICE POWER (JIANGXI) CORP