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Stress adjustment method in the manufacturing process of InGaAlN-based light-emitting devices

A technology of indium gallium aluminum nitrogen and stress adjustment, which is applied in semiconductor devices, electrical components, circuits, etc.

Active Publication Date: 2016-03-02
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Non-polar or semi-polar InGaAlN thin film, although it can solve the problem of the influence of stress on luminous efficiency, it will introduce a new stress problem of thermal expansion and contraction

Method used

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  • Stress adjustment method in the manufacturing process of InGaAlN-based light-emitting devices
  • Stress adjustment method in the manufacturing process of InGaAlN-based light-emitting devices
  • Stress adjustment method in the manufacturing process of InGaAlN-based light-emitting devices

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Embodiment Construction

[0025] The invention provides a stress adjustment method in the manufacturing process of an InGaAlN-based light-emitting device, which comprises: forming an InGaAlN thin film on a growth substrate; The coefficient is smaller than or larger than the stress adjustment rib of the InGaAlN thin film, and the stress adjustment rib weakens the variation trend of the stress generated by the subsequent processing on the InGaAlN thin film.

[0026] The result of weakening the variation trend of the stress can be used to maintain the stress of the InGaAlN thin film, for example, the InGaAlN thin film is subjected to tensile stress in subsequent steps, and the compressive stress given to the InGaAlN thin film by the stress adjustment rib is equal to the The tensile stress keeps the InGaAlN thin film in its original stress state; it can also be used to adjust the stress of the InGaAlN thin film.

[0027] For example, the InGaAlN thin film is subject to tensile stress in subsequent steps, a...

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Abstract

The invention discloses a stress adjustment method in the manufacturing process of an indium-gallium-aluminum-nitrogen-based light-emitting device, and relates to an indium-gallium-aluminum-nitrogen-based semiconductor light-emitting device. The method is used to release and adjust the stress of the indium gallium aluminum nitrogen thin film, so that the photoelectric performance and reliability of the device are improved. The method includes: forming an InGaAlN thin film on a growth substrate; forming patterned stress-regulating ribs on the InGaAlN thin film, whose expansion coefficient is smaller or larger than the InGaAlN thin film, and the stress-adjusting Rib weakens the variation trend of the stress produced by subsequent processing on the InGaAlN thin film. The present invention proposes to prepare a patterned stress-adjusting rib structure on the InGaAlN thin film. The stress-adjusting rib is attached to the surface of the InGaAlN thin film and has a thickness sufficient to affect the stress of the InGaAlN thin film. The material used for the stress-regulating ribs is selected according to the requirements of manufacturing and the material with a suitable thermal expansion coefficient.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to an indium-gallium-aluminum-nitride-based semiconductor light-emitting device. Background technique [0002] At present, the growth substrates of InGaAlN light-emitting devices that are commercialized are all heterogeneous growth substrates, and there are mainly three types: sapphire substrates, silicon carbide substrates, and silicon substrates; although other substrates can also be used for Epitaxial InGaAlN thin films have not been commercialized yet; although homogeneous growth substrates can also be made into light-emitting devices, the cost of homogeneous growth substrates is very high and commercialization is not yet mature. [0003] There is a difference in linear thermal expansion coefficient between the InGaAlN thin film and the heterogeneous substrate. The temperature for the epitaxial growth of the InGaAlN thin film is generally around 1000°C. Due to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/12
Inventor 熊传兵赵汉民江风益
Owner LATTICE POWER (JIANGXI) CORP