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Stacked CMOS (Complementary Metal Oxide Semiconductor) image sensor

An image sensor, stacked technology, applied in the field of CMOS image sensors, can solve the problems of increasing the cost of image sensors, large area of ​​image sensors, and changes in filter performance, so as to improve conversion efficiency and image quality, reduce costs, and improve The effect of the fill factor

Active Publication Date: 2014-12-31
河北苏格医疗科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a stacked CMOS image sensor, which is used to solve the problem that the image sensor for detecting natural light in the prior art uses a filter, which causes the image sensor area to be large and the filter The performance change of itself leads to the deterioration of image quality and the problem of increasing the cost of the image sensor. It is also used to solve the problem in the prior art that different image sensors need to be used to realize the detection of ultraviolet light, visible light, and infrared light.

Method used

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  • Stacked CMOS (Complementary Metal Oxide Semiconductor) image sensor

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Embodiment 1

[0063] Such as figure 1 As shown in FIG. 4, the present invention provides a stacked CMOS image sensor, including at least:

[0064] A column bus 11, an amplifier 12, a current source unit 13, and an image processing unit 14 located in the substrate layer 1; a plurality of photosensitive sensors in the photosensitive layer 2 stacked on the substrate layer 1 for absorbing light of different wavelength bands layers, in the first embodiment, are three photosensitive layers for absorbing light in three wavelength bands, wherein the first photosensitive layer is the infrared photosensitive layer 21, the second photosensitive layer is the visible light photosensitive layer 22, and the third photosensitive layer It is the ultraviolet photosensitive layer 23; and the pixel readout unit 3 including at least a reset transistor 31, a source follower transistor 32, and a row selection transistor 33. In the first embodiment, the stacked CMOS image sensor is a 4T type, then The pixel reado...

Embodiment 2

[0106] Embodiment 2 adopts basically the same technical solution as Embodiment 1, that is, the components included in the stacked CMOS image sensor provided by Embodiment 2 and Embodiment 1, the related connection methods between components and their working principles are basically the same, and the difference is The stacked CMOS image sensor in the second embodiment is a 3T type, and the pixel readout unit 3' is located in the substrate layer, and the photosensitive layer 2' is used to absorb three photosensitive layers of light in three wavelength bands, the first photosensitive layer It is a red photosensitive layer 21', the second photosensitive layer is a green photosensitive layer 22', and the third photosensitive layer is a blue photosensitive layer 23', and each photosensitive layer is made of silicon (Si) material.

[0107] It should be pointed out that light of different wavelengths has different response characteristics in the same semiconductor material. To absorb ...

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Abstract

The invention provides a stacked CMOS (Complementary Metal Oxide Semiconductor) image sensor, at least comprising a substrate layer, a photosensitive laminated layer covered on the substrate in a stacked manner, and a pixel reading unit, wherein an array bus, an amplifier, a current source unit and an image processing unit are positioned in the substrate layer; the photosensitive laminated layer comprises multiple photosensitive layers covered on the substrate layer in a stacked manner and used for absorbing light in different wavebands, and each photosensitive layer at least comprises a switch element and a photosensitive element connected with the switch element; and the pixel reading unit is positioned in the substrate layer or positioned in at least one photosensitive layer of the photosensitive laminated layer. The stacked CMOS image sensor adopts a filter-free photosensitive laminated layer with the stacked layer to realize that one pixel has the capability of detecting light in different wavebands, so that the cost and the complexity are reduced, and the conversion efficiency, the image quality and the integrity of the image sensor are greatly improved.

Description

technical field [0001] The invention relates to a CMOS image sensor, in particular to a laminated CMOS image sensor, belonging to the technical field of semiconductors. Background technique [0002] As we all know, an image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors can be roughly classified into Charge Coupled Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS) image sensors. [0003] A CMOS image sensor is generally composed of a photosensitive element and a CMOS signal processing circuit. The current common CMOS image sensor is an active pixel image sensor (APS), which is mainly divided into reset transistor (Reset Transistor, RST), source follower transistor (Source Follower Transistor, SF) and row selection according to the number of transistors it includes. Three-tube image sensor (3T type) with transistor (Row Select, RS) and four-tube image sensor including reset transistor (RST), source foll...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 孙涛汪辉方娜田犁苗田乐陈杰
Owner 河北苏格医疗科技有限公司