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Ion implantation method

A technology of ion implantation and ion beam, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of improving stability, improving fluctuations and changes

Inactive Publication Date: 2014-07-23
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is still a lack of research on improving the stability of ion implantation from the process

Method used

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  • Ion implantation method

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Comparison scheme
Effect test

Embodiment 1

[0038] The ion implantation method of Embodiment 1 of the present invention includes steps:

[0039] The ion implantation process is performed under the condition of satisfying a preset range of non-uniformity of ion beam distribution. The unevenness of the ion beam distribution can be preset according to the precision of the equipment itself or the work requirement, generally 0-15%, and in this embodiment, preferably 0-10%.

[0040] During the set first detection interval, the ion implantation process is stopped. The first detection interval is when the ion implantation equipment completes the ion implantation of 100 substrates, or it may be when the ion implantation of a certain set period of time is completed. - the time required for ion implantation of 30 substrates, of course, this time can be set as required.

[0041] The non-uniformity of the ion beam current distribution obtained by detecting the distribution of the ion beam is greater than 10%, and the non-uniformit...

Embodiment 2

[0048] The ion implantation method of Embodiment 2 of the present invention includes steps:

[0049] The ion implantation process is performed under the condition of satisfying the predetermined range of the non-uniformity of the ion beam distribution. The unevenness of the ion beam distribution can be preset according to the precision of the equipment itself or the work requirement, generally 0-15%, and in this embodiment, preferably 0-10%.

[0050] During the set first detection interval, the ion implantation process is stopped. The first detection interval is when the ion implantation equipment completes the ion implantation of 100 substrates, or it may be when the ion implantation of a certain set period of time is completed. - the time required for ion implantation of 30 substrates, of course, this time can be set as required.

[0051] The non-uniformity of the ion beam current distribution obtained by detecting the distribution of the ion beam is greater than 10%, and ...

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Abstract

The invention, which relates to the ion implantation technology field, discloses an ion implantation method. The method comprises the following steps that: a first detection interval is set to detect distribution of an ion beam, so that the degree of nonuniformity of ion beam current distribution can be obtained; an extraction voltage is adjusted until a value of difference between the degree of nonuniformity of the ion beam current distribution and a referential degree of nonuniformity is in a preset error range; and under the circumstance of the adjusted stable extraction voltage, ion implantation is carried out on a to-be-implanted base material. According to the method, distribution of ion beams can be properly monitored and improved by adjusting an extraction voltage of ion implantation equipment, thereby solving a problem that the ion beam distribution is fluctuated and changed due to different periods of time; therefore, stability of the ion beam distribution during a process of ion implantation into lots of base materials can be improved.

Description

technical field [0001] The invention relates to the technical field of ion implantation, in particular to an ion implantation method. Background technique [0002] Ion implantation is the process of implanting high-energy ion beams into the near-surface region of the substrate to change the surface properties. In the manufacture of semiconductor devices and other products, ion implantation is used to dope display panels, semiconductor wafers or other workpieces with impurities. Various manufacturing processes are usually carried out on the substrate, and in order to achieve various results on the substrate, the diffusion capacity of the dielectric layer on the substrate can be limited by implanting specific types of ions. In practical applications, the ion implantation process is performed in batches, and multiple substrates are implanted simultaneously or processed in batches. When processing multiple or multiple batches of substrates in this way, it is required that the i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265
Inventor 田慧龙春平金馝奭
Owner BOE TECH GRP CO LTD