Method for manufacturing TFT array substrate, TFT array substrate and display device
A manufacturing method and an array substrate technology, which are applied in TFT array substrates and display devices, and the manufacturing field of TFT array substrates, can solve the problems of low box alignment, affecting the brightness of TFT-LCD, reducing the opening ratio of TFT-LCD, etc., to achieve The effect of increasing the aperture ratio and improving the contrast
Active Publication Date: 2014-04-02
BOE TECH GRP CO LTD
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However, due to the low accuracy of the box alignment, the light-shielding layer is generally made very large in order to prevent light leakage, which greatly reduces the aperture ratio of the TFT-LCD, thus affecting the brightness of the TFT-LCD.
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[0053] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below in conjunction with the embodiments and the accompanying drawings. Here, the exemplary embodiments and descriptions of the present invention are used to explain the present invention, but not to limit the present invention.
[0054] like figure 1 As shown, it is a flow chart of the manufacturing method of the TFT array substrate in the embodiment of the present invention, and the specific steps are as follows:
[0055] Step 101, depositing a gate metal layer on the substrate, the gate metal layer forms a gate and a gate scan line through a photolithography process;
[0056]In this embodiment, a gate metal layer is first deposited on the substrate by sputtering or thermal evaporation, and the material of the gate metal layer includes: chromium (Cr), tungsten (W), copper (C...
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The invention provides a method for manufacturing a thin film transistor (TFT) array substrate, a TFT array substrate and a display device. The manufacturing method comprises the following steps: step 1, depositing a gate metal layer on a substrate and forming a gate electrode and a gate electrode scanning line on the gate metal layer by a photoetching process; step 2, successively depositing a gate electrode insulating layer and a semiconductor layer on the substrate that has been processed in the step 1; step 3, depositing a pixel electrode conductive layer, a source electrode layer and a drain electrode layer on the substrate that has been processed in the step 2 and forming a source electrode, a data scanning line and a pixel electrode respectively on the source electrode layer, the drain electrode layer and the pixel electrode conductive layer by the photoetching process; and step 4, respectively forming an R pixel, a B pixel and a G pixel on the substrate that has been processed in the step 3 by the photoetching process. According to the invention, the R pixel, the B pixel and the G pixel are directly arranged on the TFT array substrate by the photoetching process, thereby effectively improving an aperture ratio of a TFT-liquid crystal display (TFT-LCD) and increasing brightness of the TFT-LCD.
Description
technical field [0001] The invention relates to the technical field of display manufacturing, in particular to a method for manufacturing a TFT (thin film transistor) array substrate, a TFT array substrate and a display device. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and has been rapidly developed in recent years. [0003] TFT-LCD includes: liquid crystal panel (LCD panel), drive circuit and backlight, among which the liquid crystal panel is the most important part of TFT-LCD, it is to inject liquid crystal between two glass substrates, and seal the surrounding area with sealing glue , on the two glass substrates, the polarizers whose polarization directions are perpendicular to each other are pasted respectively. The upper glass substrate is a color filter (Color Filter, CF), which consists of red, green and blue (R, G, B) three primary colo...
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IPC IPC(8): H01L21/77H01L27/02G02F1/1362G02F1/1368
Inventor 刘翔贾勇薛建设
Owner BOE TECH GRP CO LTD