Thin film transistor array substrate and manufacturing method thereof

Abstract

The invention discloses a thin film transistor array substrate and a manufacturing method thereof. The manufacturing method comprises the following steps: preparing an active layer film and a conducting layer film on the substrate; depositing a source drain layer film on the conducting layer film, using a gray tone or halftone mask process to process the conducting layer film and the source drain layer film so as to obtain at least two data lines, a pixel electrode, a source drain electrode of the TFT (thin film transistor) and a channel; making a source electrode of one column of the TFT on the array substrate connect with one data line; after depositing an insulating layer film which covers the active layer film, the source drain electrode, the data lines and the pixel electrode, preparing via and an insulating layer of the TFT on the insulating layer film and obtaining the active layer of the TFT; preparing a gate electrode of the TFT and at least two grid scanning lines which are intersected with the data lines, and making the gate electrode of one row of the TFT on the array substrate connect with one grid scanning line. By using the method of the invention, product cost can be reduced, and a yield and an equipment capacity can be increased.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] Currently, flat panel displays are mostly used in the display field, and most of the flat panel display devices are active matrix liquid crystal display devices (Active Matrix / Organic Liquid Crystal Display, AMLCD). Existing AMLCD devices include thin film transistor (Thin Film Transistor, TFT) array substrates. Since amorphous silicon a-Si is easy to realize large-area preparation at low temperature, and the preparation technology is relatively mature, it is currently the most popular method for manufacturing TFT array substrates. widely used material. However, the bandgap of the a-Si material is only 1.7V, it is opaque to visible light, and has photosensitivity in the visible light range, so it is necessary to add an opaque metal mask (black matrix) to block light, which i...

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Problems solved by technology

[0005] Embodiments of the present invention provide a thin film transistor array substrate and a manufacturing method thereof, which are used to solve the problems in the prior art, such as high product cost, low yield rate and equipment The problem of low productivity

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