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Selenium indium bismuth barium single crystal, preparation and application thereof

A technology of barium selenide, indium, bismuth, and single crystal, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., and can solve problems such as unachievable performance.

Inactive Publication Date: 2012-08-22
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the performance of these current crystals can not reach people's ideal level. With the continuous development of mid- and far-infrared technology, the demand for infrared nonlinear crystals is also increasing. Therefore, exploring new infrared nonlinear crystals for civilian use Both the technology industry and the upgrading of military equipment have important strategic significance

Method used

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  • Selenium indium bismuth barium single crystal, preparation and application thereof
  • Selenium indium bismuth barium single crystal, preparation and application thereof
  • Selenium indium bismuth barium single crystal, preparation and application thereof

Examples

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Effect test

Embodiment 1

[0008] Example 1 Preparation of selenium, indium, bismuth, barium single crystal: according to the molar ratio of Ba: Bi: In: Se is 2: 1: 1: 5, weigh Ba, Bi, In and Se, mix them evenly, put them into a quartz crucible, and vacuumize After sealing, place it in a high-temperature furnace at 900 to 950°C for several hours, then keep the temperature for several hours, and then slowly lower it to room temperature to obtain more bright black flake single crystals. Single crystal X-ray diffraction analysis shows that the compound is selenium indium bismuth barium, the crystal parameters are as above, and the structure is as attached figure 1 shown.

Embodiment 2

[0009] Example 2 Preparation of selenium indium bismuth barium powder: according to the molar ratio of Ba: Bi: In: Se is 2: 1: 1: 5, weigh Ba, Bi, In and Se and mix them uniformly, put them in a quartz crucible, and vacuumize After sealing, place it in a high-temperature furnace at 900 to 1000°C for several hours, and cool down to room temperature at a certain rate to obtain black polycrystalline powder.

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Abstract

The invention relates to an infrared nonlinear optical selenium indium bismuth barium single crystal, a compound and an application thereof. The selenium indium bismuth barium has a molecular formula of Ba2InBiSe5 and a molecular weight of 993.26 and belongs to an orthorhombic system; a space group is Cmc21; and a unit cell parameter is as follows: alpha=beta=gamma=90 degrees, and Z=4. The selenium indium bismuth barium single crystal is prepared by adopting a sealing vacuum quartz crucible high-temperature reaction method. The selenium indium bismuth barium single crystal has excellent infrared nonlinear optical property; according to an experimental determination, the SHG strength of the powder of the selenium indium bismuth barium single crystal is about 230 times that of SiO2; and the selenium indium bismuth barium single crystal is used for preparing an infrared band laser transducer, a near-infrared optical filter, and the like.

Description

technical field [0001] The invention belongs to infrared nonlinear optical material and its preparation. Background technique [0002] Laser light sources with a wavelength range of 2-20 μm in the mid- and far-infrared bands have important applications in both civilian and military high-tech fields, and tunable infrared laser light sources with good coherence are used in remote sensing, infrared laser radar guidance, and photoelectric countermeasures. play an important role in other applications. [0003] At present, the generation of lasers in the 2-20 μm mid- and far-infrared bands is mainly based on the principle of nonlinear optics and the application of infrared nonlinear optical crystal frequency conversion technology. The commonly used infrared nonlinear optical crystals are mainly AgGaS 2 , AgGaSe 2 , ZnGeP 2 Wait. At home and abroad, these crystals have been successfully used in civilian high-tech fields and military equipment. However, the performance of thes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B1/10G02F1/355
Inventor 罗中箴林晨升程文旦张炜龙张浩
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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