Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-voltage side gate driving circuit capable of resisting common-mode noise interference

A gate drive circuit and common-mode noise technology, applied in the field of common-mode noise elimination circuit design, to achieve the effects of reliable filtering of common-mode noise, small overall delay, and small transmission delay

Active Publication Date: 2014-05-14
SOUTHEAST UNIV
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the common-mode noise suppression problem of the high-voltage gate drive chip, the present invention provides a high-voltage side gate drive circuit that can effectively avoid generating false trigger signals and is resistant to common-mode noise interference. The present invention can ensure reliable anti-interference of the overall circuit At the same time, it does not affect the normal working condition of the circuit, and at the same time improves the reliability of the system application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage side gate driving circuit capable of resisting common-mode noise interference
  • High-voltage side gate driving circuit capable of resisting common-mode noise interference
  • High-voltage side gate driving circuit capable of resisting common-mode noise interference

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] like figure 1 and figure 2 As shown, a high-voltage side gate drive circuit that can resist common-mode noise interference includes a high-voltage level shift circuit 1, a logic filter circuit 3, an RS flip-flop 4, and an output driver stage circuit 5, wherein the high-voltage level shift circuit The input of 1 is provided by the low-voltage side pulse generating circuit, the output of the logic filter circuit 3 enters the output driver stage circuit 5 through the RS flip-flop 4, and a voltage conversion clamp is set between the high-voltage level shift circuit 1 and the logic filter circuit 3 Circuit 2, the output of the high-voltage level shift circuit 1 is connected to the input end of the voltage conversion clamp circuit 2, the output end of the voltage conversion clamp circuit 2 is connected to the input end of the logic filter circuit 3, and the voltage conversion clamp circuit 2. It consists of PMOS transistor M1, PMOS transistor M2, NMOS transistor M3, resisto...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-voltage side gate driving circuit capable of resisting common-mode noise interference. The high-voltage side gate driving circuit mainly comprises a high-voltage level displacement circuit, a voltage conversion clamping circuit, a logic filtering circuit, an RS (Radio Sensing) trigger and an output drive stage circuit, wherein the high-voltage level displacement circuit converts a pulse generation signal at a low side to a high-voltage pulse signal at a high side; the voltage conversion clamping circuit is used for ensuring that double paths of noise signals output to the logic filtering circuit have the same time sequence, so as to prevent an inaccurate narrow pulse signal from being generated due to time mismatching; the logic filtering circuit filters a common-mode noise signal generated after passing through the voltage conversion clamping circuit, so that only a pulse signal in normal work is remained; and a square wave signal is output after the pulse signal passes through the output drive stage circuit, and an external high-side power tube is driven.

Description

technical field [0001] The invention relates to the technical field of high-voltage gate drive capable of resisting common-mode noise interference, and in particular to a design of a common-mode noise elimination circuit used in a half-bridge drive chip applied in the field of motor drive to prevent drive tubes from being misoperated. Background technique [0002] The drive circuit plays a very important role in many fields such as motors, automation control, and lighting. It can reduce the size of the product, improve reliability, increase stability, and improve efficiency. [0003] In recent years, with the enhancement of people's awareness of energy conservation and environmental protection, a variety of power electronic devices have emerged, which has led to the vigorous development of power integrated circuits that drive these devices, realizing the real "weak current" control of "strong current". Because of its small size, low cost, energy saving, high efficiency and i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/003
Inventor 钱钦松卢云皓祝靖孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products