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A kind of preparation method of semiconductor rectifier bridge

A rectifier bridge and semiconductor technology, applied in the field of semiconductor rectifier bridge preparation, can solve the problems of rectifier chip damage, rectifier chip consistency not guaranteed, waste, etc.

Active Publication Date: 2014-10-15
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the rectifier chip will be damaged during shaking, and because a large number of chips are shaken, there is a certain error rate, so that the consistency of the rectifier chip cannot be guaranteed. Generally, the error rate is 1%∽2%. Affected product quality, also caused great waste

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The preparation method of the semiconductor rectifier bridge of the present invention will be further described in detail below in conjunction with specific examples.

[0019] A method for preparing a DB107 semiconductor rectifier bridge, the innovation of which is: the semiconductor rectifier bridge includes an upper frame, a lower frame and a rectifier chip bonded as a whole, and the upper frame and the lower frame are provided with bumps and platforms, The rectifier chip is bonded between the upper frame and the lower frame, and its preparation method includes the following steps in sequence:

[0020] ① Place the lower frame on the lower welding boat;

[0021] ② Place the lower welding boat with the lower frame on the Ts-300B dispenser;

[0022] ③Use the Ts-300B dispenser to apply solder paste Pb on the bumps and platforms of the lower frame respectively 92.5 sn 5 Ag 2.5 ;

[0023] ④ Coat the mounted point with solder paste Pb 92.5 sn 5 Ag 2.5 Put the lower w...

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Abstract

The invention relates to a fabrication method of a semiconductor rectifier bridge, which sequentially comprises the following procedures of: placing a lower welding boat with a lower frame on a dispenser, dispensing welding adhesion agent on a bump and a platform of the lower frame with the dispenser, directly putting a rectifier chip with an anode upwards in two rectifier chips on the platform of the lower frame, and the other rectifier chip with a cathode upwards on the bump of the lower frame with a suction nozzle of a die bonder, conducting die bonding on the two rectifier chips at the room temperature simultaneously, coating the welding adhesion agent on the rectifier chips subjected to the die bonding with the dispenser, aligning an upper frame with the lower frame, and then covering an upper welding boat on the lower welding boat for die assembly, putting the welding boats subjected to the die assembly in a welding furnace for welding, finally taking out an upper and lower frame with the rectifier chips as a whole after the welding, and pouring rectifier bridge epoxy resin with a molding press to form the semiconductor rectifier bridge. The semiconductor rectifier bridge manufactured by the fabrication method is low in rejection rate, the product quality is improved, and the yield is high.

Description

technical field [0001] The invention relates to a semiconductor rectifier bridge, in particular to a method for preparing a semiconductor rectifier bridge. Background technique [0002] At present, the preparation method of the semiconductor rectifier bridge is mainly to place the lower frame on the lower welding boat; put the soldering piece in the lower frame successively; Put the welding boat into the welding furnace to make the rectifier chip and the frame form ohmic contact; take out the welded frame with the rectifier chip, and then pour the rectifier bridge epoxy resin through the molding machine, and finally form a semiconductor rectifier bridge, in which the rectifier chip is placed During the welding process, most of the domestic rectifier chips are manually screened to make the rectifier chip positive or negative upward. Then place it in the predetermined position of the frame. This method takes advantage of the different shapes of the positive and negative elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
Inventor 刘军唐永洪
Owner CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD