Sacrifice gate removing method and gate stack manufacturing method

A sacrificial gate and gate stacking technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as deterioration damage and adverse effects on semiconductor device performance, and achieve the effect of improving performance

Inactive Publication Date: 2012-09-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the dry etching process will inevitably cause damage to other parts of the gate stack such as the gate dielectric 1001 and the spacer 1003
Especially when the etch intensity is increased to remove the remaining sacrificial gate material at the corners, the damage to other parts of the gate stack will be further exacerbated
[0007] If a gate stack is formed in the structure thus etched, such as image 3 , then the performance of such a gate stack and the resulting semiconductor device will be adversely affected

Method used

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  • Sacrifice gate removing method and gate stack manufacturing method
  • Sacrifice gate removing method and gate stack manufacturing method
  • Sacrifice gate removing method and gate stack manufacturing method

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Embodiment Construction

[0026] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known knowledge and techniques are omitted to avoid unnecessarily confusing the concept of the present invention.

[0027] The accompanying drawings show cross-sectional views of structures obtained at various stages in the process flow of the method according to the embodiments of the present invention. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Re...

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Abstract

The invention discloses a sacrifice gate removing method and a gate stack manufacturing method. The sacrifice gate removing method provided by the invention comprises the following step of carrying out isotropic wet etching on a sacrifice gate to remove the sacrifice gate. In addition, after the sacrifice gate is removed, a gate conductor can be further filled so that a substituted gate stack is formed. The sacrifice gate is removed through isotropic wet etching instead of the conventional anisotropic dry etching, thus, the sacrifice gate can be more effectively removed, and other parts in the gate stack can be prevented from being damaged.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly, to a method for removing a sacrificial gate and a method for fabricating a gate stack, wherein the sacrificial gate can be effectively removed while avoiding damage to other parts of the gate stack. Background technique [0002] With the successful application of high-K / metal gate engineering on the 45nm technology node, it has become an indispensable key modular engineering for technology nodes below 30nm. At present, only Intel, which adheres to the high-K / gate last route, has achieved success in 45nm and 32nm mass production. In recent years, Samsung, TSMC, Infineon and other industry giants following the IBM industry alliance have also shifted their development focus from high-K / gate first to high-K / last metal engineering. [0003] In the high-K / metal gate project, after high-temperature annealing for ion activation, sacrificial gates such as polysilicon...

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Application Information

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IPC IPC(8): H01L21/8238
Inventor杨涛殷华湘徐秋霞赵超陈大鹏
OwnerINST OF MICROELECTRONICS CHINESE ACAD OF SCI