Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double-layer ITO (indium tin oxide) wire arrangement structure

A wiring structure, double-layer technology, applied in the field of double-layer ITO wiring structure, can solve problems such as instability, insensitive detection, etc., achieve the effect of tight distribution, increase contact area, and reduce power supply noise interference

Inactive Publication Date: 2012-09-12
SUZHOU PIXCIR MICROELECTRONICS
View PDF3 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem mainly solved by the present invention is to provide a double-layer ITO wiring structure, which can improve the detection insensitivity and instability of the traditional capacitive touch structure, and improve the sensing ability of the ITO layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-layer ITO (indium tin oxide) wire arrangement structure
  • Double-layer ITO (indium tin oxide) wire arrangement structure
  • Double-layer ITO (indium tin oxide) wire arrangement structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0014] A double-layer ITO wiring structure, each layer of ITO is respectively provided with a first-type touch electrode 10 and a second-type touch electrode 20 .

[0015] see figure 1 , the first type of touch electrode 10 includes a plurality of arc-shaped four-pointed stars 101 integrally formed, each side of the arc-shaped four-pointed star 101 extends horizontally outwards to form two rectangular branches 102, the rectangular branches 102 The width is equal, and its edges are located on the same vertical line, and a plurality of rectangular branches 102 can be formed on each side of the arc-shaped four-pointed star 101, and are not limited t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a double-layer ITO (indium tin oxide) wire arrangement structure. A first touch electrode and a second touch electrode are arranged on each ITO layer, each first touch electrode comprises a plurality of arc quadrangled stars formed integrally, each side of each arc quadrangled star extends outwards to form a plurality of rectangular branches equal in width, the edges of the rectangular branches are positioned on a same perpendicular line, and the arc quadrangled stars are connected through horizontal angles of the arc quadrangled stars. Each second touch electrode comprises a body which extends to form a plurality of branches, and the width of the body is two times of that of each branch. The first touch electrodes and the second touch electrodes are alternately staggered. By the double-layer ITO wire arrangement structure, detection sensitivity and linearity of ITO layers are remarkably improved.

Description

technical field [0001] The invention relates to an ITO wiring structure, in particular to a double-layer ITO wiring structure. Background technique [0002] The so-called ITO (indium tin oxide) is a key material used in the production of liquid crystal displays. At present, it is widely used in the fields of instrumentation, computers, electronic watches, game consoles and household appliances. In recent years, the hot capacitive touch screen on the market also uses ITO to complete the touch detection action, and the ITO wiring on the capacitive touch screen is generally double-layered. The main principle is: using the electric field of the human body, when the user touches, the surface moves Or the mutual capacitance (also called coupling capacitance) of the sensing unit at the intersection of columns will change, and the specific position of the touch point can be finally detected according to the above change. [0003] The common double-layer ITO structure is a rhombus s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/044
Inventor 孟得全
Owner SUZHOU PIXCIR MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com