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Optoelectronic device and method for manufacturing an optoelectronic device

A technology of optoelectronic devices and optoelectronics, which is applied in the fields of electro-solid devices, laser parts, and structural details of semiconductor lasers. It can solve the problems of high cost, insufficient realization and high assembly cost, and achieve the effect of simple layer thickness

Active Publication Date: 2016-04-06
OSRAM OPTO SEMICONDUCTORS GMBH & CO OHG
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, the layers deposited by the above commonly used methods have, for example, the disadvantage that with this method only an insufficiently uniform coverage of steep and locally unevenly shaped side walls on all sides can be achieved.
The disadvantages of this method are, on the one hand, the high assembly complexity associated with additional costs and, on the other hand, the inability to prevent damage caused by leaks in the housing and / or residual moisture in the housing. Damage to the laser diode and thus the risk of failure of the laser diode
[0014] Expensive and often insufficient measures of encapsulating the laser diode in a hermetically sealed housing in order to thereby increase the stability of the component have additional, significant disadvantages which are related to the limited structural shape and size. The compactness is associated with the low flexibility regarding the integration of other optical components

Method used

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  • Optoelectronic device and method for manufacturing an optoelectronic device
  • Optoelectronic device and method for manufacturing an optoelectronic device
  • Optoelectronic device and method for manufacturing an optoelectronic device

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Embodiment Construction

[0070] exist Figures 1A to 1D A method for producing an optoelectronic component 100 having a semiconductor component 10 is shown according to an exemplary embodiment.

[0071] in accordance with Figure 1AIn a first method step, a so-called semiconductor layer assemblage 90 is provided in the form of a so-called wafer assemblage. The semiconductor layer composition 90 has a semiconductor wafer 91 on which the semiconductor layer sequence 2 with the active region 3 is deposited. An electrical contact layer 4 made of metal, a metal layer sequence and / or a metal alloy is applied on the semiconductor layer sequence 2 . In the exemplary embodiment shown, the electrical contact layer 4 is shown purely by way of example and can also be structured, for example. Furthermore, one or more further electrical contact layers can be applied, so that double-sided contacting of the semiconductor layer sequence 2 and in particular double-sided contacting of the active region 3 is possible....

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Abstract

An optoelectronic component is proposed, which has: at least one inorganic optoelectronic active semiconductor component (10) with an active region (3), which is suitable for radiating or receiving light during operation; and in at least one A potting compound ( 6 ) applied by means of atomic layer deposition on the surface region ( 7 ), which covers the surface region ( 7 ) in a gas-tight manner. Furthermore, a method for producing an optoelectronic component is proposed.

Description

technical field [0001] The invention proposes an optoelectronic component and a method for producing an optoelectronic component. Background technique [0002] Optoelectronic semiconductor devices such as light-emitting diodes (LEDs), edge-emitting lasers, vertical-cavity surface-emitting lasers (VCSELs), laser arrays, photodiodes, solar cells, phototransistors, etc. are increasingly used in lighting technology, projection, Central components in data storage, printing technology, energy harvesting and many other applications. [0003] Material systems based on AlInGaN, InGaAlP and AlGaAs can cover the entire spectral range from ultraviolet to infrared for emitting or detecting semiconductor devices. Light sources based in particular on so-called semiconductor systems have advantages over competing solutions such as incandescent lamps or halogen light sources in terms of their compactness and high service life. [0004] In this case, innovative technical developments, such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/44H01L31/0216
CPCH01L24/24H01L24/48H01L24/82H01L33/0095H01L2224/24145H01L2224/24226H01L2224/48091H01L2224/48227H01L2224/484H01L2224/8592H01L2924/01004H01L2924/01012H01L2924/01013H01L2924/01014H01L2924/0102H01L2924/01031H01L2924/01032H01L2924/01038H01L2924/01058H01L2924/01073H01L2924/01078H01L2924/01082H01L2924/10329H01L2924/10336H01S5/02H01S5/20H01S2301/176H01L2924/01005H01L2924/01023H01L2924/01033H01L2924/0104H01L2924/01068H01L2924/01072H01L2924/014H01L2924/12041H01L2924/3025H01L2924/00014H01L2924/12042H01L2924/12036H01L2924/12043H01L2924/181H01L2933/0025H01L31/02005H01L31/035281H01L33/44H01L31/0203H01L31/02161H01L2924/00H01L2224/45099H01L2924/00012H01L2224/85399H01L2224/05599H01L31/02019H01L31/186H01L33/56H01L33/62H01L2933/005H01S5/028
Inventor 艾尔弗雷德·莱尔迈克尔·费雷尔蒂尔曼·施伦克尔森克·陶茨乌韦·施特劳斯马丁·穆勒
Owner OSRAM OPTO SEMICONDUCTORS GMBH & CO OHG
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