Semiconductor device and method for manufacturing semiconductor device

Abstract

A method of integrated circuit fabrication is provided, and more particularly fabrication of a semiconductor apparatus with a metallic alloy. An exemplary structure for a semiconductor apparatus comprises a first silicon substrate having a first contact comprising a silicide layer between the substrate and a first metal layer; a second silicon substrate having a second contact comprising a second metal layer; and a metallic alloy between the first metal layer of the first contact and the second metal layer of the second contact.

Description

technical field [0001] The present invention relates to integrated circuit fabrication, and more particularly to semiconductor devices having metal alloys. Background technique [0002] Microelectromechanical systems (MEMS) technology is the integration of very small mechanical devices such as sensors, valves, gears, mirrors, and drives on computers mounted inside a silicon substrate. Therefore, MEMS devices are often referred to as smart machines. In order to prevent external interference during operation, a cover substrate needs to be bonded to hermetically seal the MEMS device to form a semiconductor device. Furthermore, in many applications it is also desirable that the substrates being bonded include integrated circuit (IC) devices. [0003] However, there are challenges when implementing these components and processes in MEMS or IC device fabrication. For example, in the "substrate bonding" process, since high contact resistance materials are generated in the interf...

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Problems solved by technology

For example, in the "substrate bonding" process, since high contact resistance materials are generated in the interface between the bonded substrates, it is difficult to achieve low contact resistance bonding between the bonded substrates, thereby increasing the instability and / or possibility of failure

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