Linear thin-film magneto-resistive sensor equipped with magnetism gathering layer
A magnetoresistive sensor and film technology, which is applied in the direction of transmitting sensing components with electric/magnetic devices, can solve the problems of affecting the accuracy of measurement and limiting the range of measurable magnetic field, so as to achieve low cost, improve sensitivity and measurement range, and accuracy and highly linear effects
Inactive Publication Date: 2012-09-26
MULTIDIMENSION TECH CO LTD
View PDF4 Cites 8 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] When the magnetoresistive sensor body measures the analog quantity, the magnetic material of the free layer itself has a saturation field, which limits the range of the measurable magnetic field. At the same time, the magnetoresistive sensor body has a sensitivity change with temperature, which affects the measurement accuracy.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0036] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0037] In order to improve the detection sensitivity of the existing thin-film magnetoresistive sensor, the present invention includes a substrate; a magnetoresistive sensor body, located on the substrate, with a first magnetic moment and a second magnetic moment perpendicular to each other; a magnetic gathering layer, located on the substrate Above the substrate, it is insulated from the main body of the magnetoresistive sensor, and acts on the main body of the magnetoresistive sensor after amplifying the external magnetic field to be measured. The field strength of the external magnetic field to be measured is amplified by the magnetic gathering layer, and can be detected by the sensor body even when the field strength of the external magnetic field to be measured is small. The structure of the magnetoresistive sensor body can adopt the structure of the exist...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a magneto-resistive sensor, and in particular relates to a linear thin-film magneto-resistive sensor equipped with a magnetism gathering layer, belonging to the technical field of semiconductors. According to the technical scheme of the invention, the linear thin-film magneto-resistive sensor equipped with the magnetism gathering layer comprises a substrate, a magneto-resistive sensor body and the magnetism gathering layer, wherein the magneto-resistive sensor body is arranged on the substrate and equipped with a first magnetic moment and a second magnetic moment which are mutually perpendicular in the direction; the magnetism gathering layer is arranged above the substrate and in insulated and isolated from the magneto-resistive sensor body and is used for amplifying a to-be-measured external magnetic field and then acting the amplified external magnetic field on the magneto-resistive sensor body. The magnetism gathering layer is arranged on the magneto-resistive sensor body, current leads are arranged above or below the magnetism gathering layer, and the magnetism gathering layer can amplify the induced magnetic field generated by the current leads and the to-be-measured external magnetic field, thus the sensitivity of the thin-film magneto-resistive sensor is improved and the measuring range of the thin-film magneto-resistive sensor is widened. The linear thin-film magneto-resistive sensor has the advantages of high accuracy and linearity, adjustable range of linearity, simple process, high corresponding frequency, low cost, strong anti-interference performance and good temperature characteristic.
Description
technical field [0001] The invention relates to a magnetoresistance sensor, in particular to a linear thin-film magnetoresistance sensor with a magnetization-gathering layer, and belongs to the technical field of thin-film magnetoresistance sensors. Background technique [0002] The magnetoresistive sensor body is widely used in the field of data storage (computer hard disk, MRAM), current measurement field, position measurement, object movement and speed, angle and angular velocity measurement fields. [0003] The body of the magnetoresistive sensor has a multilayer film structure and a spin valve structure. A multilayer film structure includes magnetic and nonmagnetic layers, which are alternately deposited on a substrate. The spin valve structure includes nonmagnetic pinning layer (MnIr, MnPt), magnetic pinned layer (CoFeB, CoFe, or SAF structure CoFe / Ru / CoFe, CoFe / Ru / CoFeB / Ta / CoFeB, etc.), nonmagnetic Isolation layer (Cu, AlO, MgO, HfO, ZrO, TaO, etc.), magnetic free l...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): G01D5/12
Inventor 王建国
Owner MULTIDIMENSION TECH CO LTD