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High-voltage light-emitting diode with charge transport limitation

A high-voltage light-emitting and diode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as design failure, device impact, and inability to fundamentally solve problems, and achieve the effect of reducing depth and improving reliability

Active Publication Date: 2012-10-03
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The second is the insulating layer. If the insulating layer does not have good insulating properties, the entire design will fail. The difficulty lies in that the side walls of the deep isolation trenches must be covered with a coating with good coating, tight film quality and good insulation properties. Grinding layer, while the depth of conventional high-voltage LED isolation grooves limits the insulating layer to be well coated on the side wall
For the second difficulty, someone proposed a method of adding a step on the side wall, which will help the insulating layer to cover better, but this method also increases the complexity of the process and requires an additional step on the original basis. photolithography process, and may introduce other problems that affect the entire device
Therefore, this method cannot fundamentally solve the problem. To solve the above two problems, it is necessary to start with solving the deep isolation groove.

Method used

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  • High-voltage light-emitting diode with charge transport limitation
  • High-voltage light-emitting diode with charge transport limitation
  • High-voltage light-emitting diode with charge transport limitation

Examples

Experimental program
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Effect test

Embodiment 1

[0025] For the preparation method, refer to the attached Figure 3-9 , taking GaN as the epitaxial layer material, the conductivity type is P / I / N / N / I / P, and SiO2 as the insulating material as an example, the device consists of the following parts: p-GaN, p-AlGaN, InGaN, n- AlGaN, n-GaN, InGaN, p-GaN, InGaN / GaN, sapphire.

[0026] The structure shown in 2, wherein: 1 is the first electrode, the material is Ni / Au; 2 is the first contact layer, the material is p-GaN; 3 is the first confinement layer; the material is p-AlGaN; Source region, the material is InGaN; 5 is the second confinement layer, the material is n-AlGaN; 6 is the second contact layer, the material is n-GaN; 7 is the metal connection layer, the material is Ti / Al / Ti / Au; 8 9 is an undoped current confinement layer made of InGaN; 10 is an inversion protection layer made of p-GaN; 11 is a buffer layer made of InGaN / GaN; 12 is a substrate made of sapphire; 13 is an insulating isolation layer, the material is SiO2; 15...

Embodiment 2

[0035] For the preparation method, refer to the attached Figure 3-9 , taking GaAs as the epitaxial layer material, the conductivity type is P / I / N / N / I / P, and SiNx as the insulating isolation layer material as an example, the device is composed of the following parts: p-AlGaInP (Mg), p-AlGaInP (Mg), AlGaInP, n-AlGaInP (Si), n-GaInP (Si), AlGaInP, p-AlGaInP (Mg), GaAs buffer, GaAs.

[0036] The structure shown in 2, wherein, 1 is the first electrode, the material is Ni / Au; 2 is the first contact layer, the material is p-AlGaInP (Mg); 3 is the first confinement layer; the material is p-AlGaInP ( Mg); 4 is the active region, the material is AlGaInP; 5 is the second confinement layer, the material is n-AlGaInP (Si); 6 is the second contact layer, the material is n-GaInP (Si); 7 is the metal connection layer , the material is Ti / Al / Ti / Au; 8 is the isolation groove; 9 is the undoped current confinement layer, the material is AlGaInP; 10 is the inversion protective layer, the materia...

Embodiment 3

[0045]For the preparation method, refer to the attached Figure 3-9 , taking GaAs as the epitaxial layer material, the conductivity type is N-I-P-P-I-N, and SiO2 as the insulating material as an example, the device is composed of the following parts: n-GaInP(Si), n-AlGaInP(Si), AlGaInP, p-AlGaInP(Mg) , p-AlGaInP (Mg), AlGaInP, n-AlGaInP (Si), GaAs buffer, GaAs.

[0046] The structure shown in 2, wherein, 1 is the first electrode, the material is Ti / Au; 2 is the first contact layer, the material is n-GaInP (Si); 3 is the first confinement layer; the material is n-AlGaInP ( Si); 4 is the active region, the material is AlGaInP; 5 is the second confinement layer, the material is p-AlGaInP (Mg); 6 is the second contact layer, the material is p-AlGaInP (Mg); 7 is the metal connection layer , the material is Ti / Al / Ti / Au; 8 is the isolation groove; 9 is the undoped current confinement layer, the material is AlGaInP; 10 is the inversion protective layer, the material is n-AlGaInP(Si);...

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Abstract

The invention discloses a high-voltage light-emitting diode with charge transport limitation and a preparation process of the high-voltage light-emitting diode with charge transport limitation, belonging to the field of semi-conductor optoelectronic devices. The main structure of the high-voltage light-emitting diode (LED) sequentially comprises an electrode, contact layers, an active area, an isolation groove, an undoped current limitation layer and an inversion protection layer which form an LED structure. The structure is as follows: the LED is insulated by using a method of etching the isolation groove by an inductively coupled plasma (ICP), the LED is limited to be at an inversion state during work by a carrier transport limitation structure formed by a second contact layer, the undoped current limitation layer and the inversion protection layer, and finally sputtering metals for series connection to form a light-emitting array. By using the preparation process of the high-voltage light-emitting diode with charge transport limitation disclosed by the invention, the original method for etching to a substrate is replaced; the depth of the isolation groove is greatly reduced; the problem of wrapping the lateral walls of the isolation groove by the insulation layer well is solved; deep etching process is unnecessary for the device preparation. Meanwhile, the structure provides static protection to the device and the reliability of the device is improved.

Description

technical field [0001] The invention relates to a high-voltage light-emitting diode with charge transport limitation, which belongs to the field of semiconductor optoelectronic devices. technical background [0002] In recent years, due to the advancement of technology and efficiency, LEDs have become more and more widely used. With the upgrading of LED applications, the market demand for LEDs is developing towards higher power and higher brightness, that is, high-power LEDs. For the realization of high-power LEDs, the current design of high-voltage light-emitting diodes has become one of the solutions. The first key technology of high-voltage light-emitting diodes lies in the deep isolation trench. The depth of the isolation trench varies according to different epitaxial structures, but it needs to be etched to the substrate. The purpose is to separate multiple unit cells. Therefore, it is necessary to develop a deep etching process technology. The second is the insulati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14
Inventor 朱彦旭郭伟玲丁艳
Owner BEIJING UNIV OF TECH