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Semiconductor wire bonding structure and method

A wire bonding and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as large aluminum extrusion size, damage to aluminum walls, and lower yields

Active Publication Date: 2012-10-10
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the known wire bonding process, the copper wire only vibrates in one direction relative to the aluminum pad, which will cause the size of the aluminum extrusion to be too large, and increase the risk of damage to the aluminum wall and short circuit of the aluminum extrusion, thereby reducing the yield

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  • Semiconductor wire bonding structure and method
  • Semiconductor wire bonding structure and method
  • Semiconductor wire bonding structure and method

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Embodiment Construction

[0010] refer to figure 1 , shows a schematic cross-sectional view in one direction of an embodiment of the semiconductor wire bonding structure of the present invention. The semiconductor wire bonding structure 1 includes a semiconductor element 2 and a bonding wire 3 . The semiconductor device 2 (such as a chip) has a device surface 21 , a bonding pad 22 and a protection layer 23 .

[0011] The bonding pad 22 is disposed on the device surface 21 of the semiconductor device 2 . The pad 22 has a pad surface 221 , a central concave portion 222 and a ring-shaped protrusion 223 . The central recess 222 is recessed on the pad surface 221 and corresponds to the end of the bonding wire 3 . The annular protrusion 223 protrudes from the pad surface 221 and continuously surrounds the central recess 222 . To be careful of, figure 1 Only a schematic cross-sectional view in one direction is shown, therefore, only the first protrusion 223a is shown, which is a part of the annular protr...

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Abstract

The invention is about a semiconductor wire bonding structure and method. The wire bonding structure comprises a semiconductor component and a bonding wire. The weld pad of the semiconductor component is provided with a central concave part and an annular raised part. The bonding wire is provided with a connecting part jointed with the central concave part. The annular raised part continuously encircles the connecting part, and is approximately ring-shaped in an equal width manner.

Description

technical field [0001] The present invention relates to a semiconductor bonding, in particular, to a semiconductor wire bonding structure and a semiconductor wire bonding method. Background technique [0002] In known semiconductor processes, copper wires need to be bonded to aluminum pads for the purpose of electrical connection. However, in the known wire bonding process, the copper wire only vibrates in one direction relative to the aluminum pad, which will cause the size of the aluminum extrusion to be too large, and increase the risk of damage to the aluminum wall and short circuit of the aluminum extrusion, thereby reducing the yield . The above situation is more obvious when the thickness of the aluminum pad is larger. Contents of the invention [0003] One aspect of the present disclosure relates to a semiconductor bonding structure. In one embodiment, a semiconductor wire bonding structure includes a semiconductor element and a bonding wire. The semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/607
CPCH01L24/48H01L24/78H01L2224/78301H01L24/05H01L2224/48451H01L24/85H01L2224/85181
Inventor 洪志成吴孟霖叶科廷陈胜鸿
Owner ADVANCED SEMICON ENG INC