SiGe base vertical channel strain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device and manufacturing method

Abstract

The invention discloses a SiGe base vertical channel strain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device and a manufacturing method. The method comprises the following steps of: manufacturing a SiGe HBT (Heterojunction Vipolar Transistor) device at a bipolar device area on a Si substrate sheet; etching an active area of an NMOS (N-Channel Metal Oxide Semiconductor) device; extensionally growing five layers of materials at the area so as to form the active area of the NMOS device; manufacturing the NMOS device; etching an active area of the PMOS (P-Channel Metal Oxide Semiconductor) device; extensionally growing three layers of materials at the area so as to form the active area of the PMOS device; forming a virtual grid and accomplishing the manufacturing of the PMOS device; and forming the SiGe base vertical channel strain BiCMOS integrated device and a circuit. The characteristics that the electronic mobility rate at the vertical direction and the hole mobility rate at the horizontal direction of the SiGe material are higher than that of the relaxation Si are utilized; and through a low temperature process, a circuit of the performance-enhanced SiGe base vertical channel strain BiCMOS integrated device is manufactured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a SiGe-based vertical channel strained BiCMOS integrated device and a preparation method. Background technique [0002] Semiconductor integrated circuits are the foundation of the electronics industry, and people's huge demand for the electronics industry has prompted the rapid development of this field. In the past few decades, the rapid development of the electronics industry has had a huge impact on social development and national economy. At present, the electronics industry has become the largest industry in the world, occupying a large share in the global market, and its output value has exceeded 1 trillion US dollars. [0003] SiCMOS integrated circuits have the advantages of low power consumption, high integration, low noise and high reliability, and occupy a dominant position in the semiconductor integrated circuit industry. Howeve...

AI Technical Summary

Problems solved by technology

However, with the further increase of the scale of integrated circuits, the reduction of device feature size, the increase of integration and complexity, especially after the device feature size enters the nanometer scale, the limitations of materials and physical characteristics of SiCMOS devices have gradually emerged. , limiting the further development of Si integrated circuits and their manufacturing processes

Although microelectronics has made great progress in the research and application of compound semiconductors and other new materials in some fields, it is far from having the conditions to replace silicon-based processes

Images