Preparation method of InGaN/Si double-node solar cell
A solar cell, n-si technology, applied in the field of solar cells, can solve the problems of increasing the complexity of the epitaxial process, reducing the total conversion efficiency of the cell, and increasing the production cost, so as to improve the total conversion efficiency, improve the radiation resistance ability, and prolong the service life The effect of longevity
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[0026] The preparation method of InGaN / Si double-junction solar cell, the preparation process includes selecting n-Si after cleaning as the substrate; using metal organic chemical vapor deposition technology, that is, MOCVD, to grow an AlN nucleation layer on the n-Si substrate; Growth of GaN buffer layer on the core layer; growth of n-In on the GaN buffer layer x Ga 1-x N layer; in n-In x Ga 1-x Growth of p-In on N layer x Ga 1-x N layer, and evaporation positive and negative electrodes.
[0027] The innovation of the present invention is: the following steps are also included in the preparation process:
[0028] ① forming a p-Si layer between the n-Si substrate and the AlN nucleation layer
[0029] Before growing the AlN nucleation layer on the n-Si substrate, feed TMAl with a flow rate of 20-40mL / min and NH with a flow rate of 2-5L / min 3 , at 500-700°C, Al atoms begin to diffuse into the n-Si layer to replace Si atoms, forming a highly doped surface, and then increas...
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[0034] Embodiment: refer to attached Figure 1-Figure 2 :
[0035] Step 1, select n-Si after ultrasonic cleaning as the substrate;
[0036] Step 2, using Metal Organic Chemical Vapor Deposition (MOCVD), place n-Si substrate 1 in the reaction chamber, feed TMAl flow rate 30mL / min and NH 3 The flow rate is 3L / min, and at 600°C, Al atoms begin to diffuse into the n-Si layer to replace Si atoms, forming a highly doped surface, and then the temperature rises to 1000°C, Al atoms diffuse further, forming a deep junction with the n-Si substrate 0.1um p-Si layer 2, on which a 60nm-thick AlN nucleation layer 3 grows; the p-Si layer and n-Si layer constitute a Si bottom battery, which is not only easy to prepare, but also a battery The total conversion efficiency can reach more than 30%;
[0037] Step 3, using metal-organic chemical vapor deposition technology to grow a GaN buffer layer 4 on the AlN nucleation layer, the growth temperature is 1000°C, and the thickness is 1 μm. This la...
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