Semiconductor device and method of enlarging active area of semiconductor device

Abstract

This document discusses, among other things, a semiconductor device and method of enlarging active area of semiconductor device. The semiconductor device includes a first metal layer coupled to a source region and a second metal layer coupled to a gate structure, wherein at least a portion of the first and second metal layers overlap vertically.

Description

technical field [0001] Examples relate, among other things, to metal oxide semiconductor field effect transistors (MODFETs) and methods of manufacturing the same. More specifically, examples include multilayer power MOSFETs. Background technique [0002] The layout of many discrete metal-oxide-semiconductor field-effect transistor (MOSFET) devices includes gate pads in the die that are sufficiently sized to accommodate bond wires or other connections. Because of this size requirement, the gate pad may occupy a majority (eg, 50%, etc.) of the smaller die. Furthermore, the required size of the gate pad can limit the active area in the semiconductor device because in many examples there is no active area under the gate pad. [0003] figure 1 An example of a portion of a semiconductor device 100 including a source contact region 102 , a gate dielectric 103 , a gate bus line 104 , a gate structure 105 , a second dielectric 106 and a substrate 113 is generally shown. In some e...

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Problems solved by technology

Furthermore, the required gate pad size limits the active area in semiconductor devices because in many examples there is no active area under the gate pad.

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