Semiconductor epitaxial wafer substrate-bearing disk, supporting device thereof and metal organic chemical vapor deposition (MOCAD) reaction chamber

Abstract

The invention discloses a semiconductor epitaxial wafer substrate-bearing disk, a supporting device thereof and a metal organic chemical vapor deposition (MOCAD) reaction chamber. A substrate-bearing cavity which is used for bearing a substrate is arranged on the upper surface of the substrate-bearing disk of a semiconductor epitaxial wafer; an annular structure which is coupled with the upper end face of a supporting shaft is arranged at a position of the lower surface of the substrate-bearing disk, which is close to the outer surface of the substrate-bearing disk; the supporting device comprises the supporting shaft which is connected with the substrate-bearing disk in a coupling mode and the supporting shaft is a hollow shaft; the MOCAD reaction chamber comprises an annular reaction chamber wall, the supporting shaft which is located on the inner side of the reaction chamber wall and the substrate-bearing disk which is installed at the top end of the supporting shaft; and a spraying nozzle is arranged on the upper portion of the substrate-bearing disk. The structure of the MOCAD reaction chamber is characterized in that the substrate-bearing disk is the substrate-bearing disk of the semiconductor epitaxial wafer, the supporting shaft is the hollow shaft, a fixing shaft is arranged inside the hollow shaft, and a heater is arranged on the lower portion of the substrate-bearing disk. Accordingly, the substrate-bearing disk has a simple structure, the production process of the substrate-bearing disk is simplified, simultaneously, the thickness of the substrate-bearing disk can be thinner on the premise that the requirement for strength is met, materials are saved and the temperature change rate of the substrate-bearing disk is improved.

Description

technical field [0001] The invention relates to a device for semiconductor epitaxy equipment, in particular to a metal organic chemical vapor deposition (MOCVD) carrier disk and a supporting and rotating connection device matched with it; and a reaction chamber using the device. Background technique [0002] MOCVD equipment, metal organic chemical vapor deposition equipment is the most important equipment for the production of third-generation semiconductor materials GaN (GaAs, AlN, etc.); it is the key equipment in the semiconductor industry. The equipment integrates various disciplines such as computational fluid dynamics, heat transfer, system integration control, and compound growth. It is a high-tech and high-tech equipment; it is a strategic high-tech semiconductor that breaks through the bottleneck of industrial development and improves the industrial level. equipment. [0003] In order to improve production efficiency and equipment utilization when MOCVD deposits se...

AI Technical Summary

Problems solved by technology

However, it is still an intermediate support method, and the strength requirements for the loading tray are still relatively high.

[0006] The above two connection forms of the loading tray and the rotating shaft can realize the convenient replacement of the loading tray, but the coupling contact surface between the loading tray and the rotating shaft of the two structures is relatively small, and it is not easy to ensure that the upper surface of the loading tray is in contact with the rotating shaft. The verticality of the shaft axis; and when the speed of the rotating shaft changes greatly, there may be relative slippage between the loading disc and the rotating shaft, which makes the speed control of the loading disc inaccurate, and also affects the rotation axis and the loading. Disc life

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