Crystalline film, device, and production methods for crystalline film and device
A manufacturing method and crystallization technology, which is applied in the field of manufacturing crystalline films, devices, and crystalline films or devices, can solve the problems of light-emitting wavelength deviation, different light-emitting wavelengths of light-emitting devices, and deviations, so as to shorten the amount of warpage , Shorten, reduce or eliminate the process, reduce or eliminate the effect of deviation
Inactive Publication Date: 2012-10-31
NAMIKI PRECISION JEWEL CO LTD +1
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Problems solved by technology
Specifically, when such a crystalline film 100 is used to manufacture, for example, a light-emitting device, the emission wavelength varies within the plane of the crystalline film 100 due to the variation in the composition of the epitaxial layer.
Therefore, there is a risk that the manufactured light-emitting devices have different light-emitting wavelengths and have variations.
Method used
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[0063] Below, refer to Figure 1 ~ Figure 4 The crystalline film and device according to the present invention and their production methods will be described. figure 1 It is a schematic diagram showing the epitaxial growth process of the crystalline film according to this embodiment.
[0064] The crystalline film of the present invention is characterized in that it is formed by epitaxial growth on a substrate for epitaxial growth (hereinafter referred to as "substrate for growth") to a thickness of 300 μm or more and 10 mm or less, and then separated from the substrate for growth, and further inside A pattern of modified regions is formed.
[0065] exist figure 1 On the surface of the crystal growth plane of the growth substrate 1 shown in (a), such as figure 1 The low-temperature buffer layer 2 is epitaxially grown as shown in (b). Furthermore, if figure 1 The crystalline film 3 is formed by epitaxial growth as shown in (c). An example of the crystalline film 3 is a...
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Disclosed are a crystalline film in which variations in the crystal axis following separation from a substrate for epitaxial growth have been resolved, and various devices in which the properties thereof have been improved by being provided with the crystalline film. Also disclosed are production methods for the crystalline film and the devices. A crystalline film with a thickness in the range of 300 [mu]m to 10 mm is formed by means of epitaxial growth upon the surface of a single crystal substrate, which is the substrate for epitaxial growth, the crystalline film is thereafter separated from the single crystal substrate, the relative position in the thickness direction of the crystalline film where warping has occurred following separation is scanned by focusing a pulse laser in the interior of the crystalline film in the range of 3% to less than 50% in the thickness direction, on the assumption that the surface on the side curving in a concave shape is 0% and the surface curving in a convex shape is 100%, and a reforming region pattern is formed using multiphoton absorption from the pulse laser, thereby reducing or resolving the amount of warping of the crystalline film and reducing or resolving variations in the crystal axis angle.
Description
technical field [0001] The present invention relates to a crystalline film, a device, and a method for manufacturing the crystalline film or device produced using a substrate for epitaxial growth. Background technique [0002] Nitride semiconductors represented by gallium nitride (GaN) are widely used in light-emitting diodes (LEDs) and semiconductor lasers (LDs) due to their wide band gaps and the ability to emit blue light. For example, white LEDs that combine GaN-containing blue LEDs and yellow light emitters are widely used as backlights for liquid crystal displays (LCDs) such as mobile phones. In addition, since the above-mentioned white LED has advantages such as low power consumption and long life, it is expected to replace fluorescent lamps and incandescent lamps as an environmentally friendly light source, and research and development are being actively carried out. [0003] The crystalline film of the above-mentioned nitride semiconductor is formed by epitaxial gr...
Claims
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IPC IPC(8): H01L21/20H01L21/205H01L21/268
CPCC30B33/04H01L21/268H01L21/02458H01L21/02691H01L21/02428H01L21/02686H01L21/0237H01L21/0254H01L21/0242H01L21/20
Inventor 会田英雄青田奈津子星野仁志古田健次浜元友三郎本庄庆司
Owner NAMIKI PRECISION JEWEL CO LTD