Implementing method of protecting IEGT (injection enhanced gate transistor) based on relay protection tripping signal

Abstract

The invention discloses an implementing method of protecting an IEGT (injection enhanced gate transistor) based on a relay protection tripping signal, belonging to the field of control. The implementing method comprises the steps of: introducing a 'tripping' control signal of a breaker into logic trigger conditions of a blocking IEGT triggering pulse module to form a mode of new logic trigger conditions of the blocking IEGT triggering pulse module together with original logic trigger conditions, outputting a 'blocking IEGT triggering pulse' signal through the blocking IEGT triggering pulse module after a microcomputer protection device outputs the 'tripping' control signal, before the 'tripping' mechanical action of the breaker, shielding / blocking the triggering pulse of the IEGT in a frequency convertor so as to turn off the IEGT and avoid the impact on the IEGT caused by a di / dt current mutation value impact, and to protect the IEGT. The protection action mechanism of the implementing method is cleverly set and easily achieved, and according to the protection action mechanism, the needed time of an on-site repair process is shortened greatly, the production can be resumed quickly and the production / maintenance cost can be lowered. The implementing method can be widely applied to the control / protection field of the driving system of a rolling mill set.

Description

technical field [0001] The invention belongs to the control field, in particular to a control / protection method for electronic devices in a high-voltage frequency converter device. Background technique [0002] Most of the transmission systems of the rolling units in the existing cold rolling mills use high-power AC-DC-AC frequency conversion control systems. The frequency conversion control systems are controlled by the rolling mill transmission PLC to control the power output characteristics of the frequency converters. [0003] The electronic components used in the medium-voltage rectification part of the rolling transmission system of the twenty-high cold-rolling unit of the applicant enterprise are IEGT. [0004] IEGT (Injection Enhanced Gate Transistor, Electron Injection Enhanced Gate Transistor) is an IGBT series power electronic device with a withstand voltage of more than 4KV. It achieves a low on-state voltage by adopting an enhanced injection structure. [0005]...

AI Technical Summary

Problems solved by technology

[0010] Due to the sudden change of current in a short time (which can be regarded as an instant), the impact of di / dt current mutation value will cause the IEGT components in the rectification part of the inverter (indicated by the inverter in the figure) to be subjected to di / dt current mutation value The impact and breakdown damage

[0011] Due to the high purchase price of the IEGT components in the rectification part of the frequency converter, the large amount of on-site installation and commissioning, and the "matching" problem between the components before the replacement of the components, it is troublesome to choose the appropriate components, so Once the above failures occur, the on-site repair process will take a long time and the maintenance cost will be high, which is not conducive to the rapid restoration of production and the reduction of production / maintenance costs

[0012] In the prior art, for the above situation, there is no mature and practical preventive method or preventive measures

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