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A kind of laser crystal and its preparation method and application

A laser crystal and crystal technology, applied in crystal growth, chemical instruments and methods, self-solids, etc., can solve the requirements of fluorescence spectrum line broadening, temperature quenching, and can not meet the requirements of high thermal conductivity of ultra-high power lasers, etc. problem, to achieve the effect of simple process and easy industrialization

Active Publication Date: 2015-09-16
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the temperature of the working substance rises, it will lead to the broadening of its fluorescence spectrum and the shortening of the spontaneous emission lifetime, thereby reducing the energy conversion efficiency of the device, increasing the threshold, and in severe cases, a "temperature quenching" phenomenon (see W.A.Clarkson, J.Phys. D: Appl. Phys. 34, 16 (2001))
At present, the main method to solve the heat dissipation problem of the laser is to equip a cooling system, but this not only makes the overall structure of the laser complex, but also increases the cost accordingly
Another method is to increase the thermal conductivity of the working substance itself. However, the commonly used solid-state laser working substances include yttrium aluminum garnet (YAG), whose thermal conductivity is only 12W / m·K, and alumina, whose thermal conductivity The conductivity is 54W / m K, obviously these still cannot meet the requirements of ultra-high power lasers for working substances with high thermal conductivity

Method used

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  • A kind of laser crystal and its preparation method and application
  • A kind of laser crystal and its preparation method and application
  • A kind of laser crystal and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] According to the stoichiometric ratio, 4.2g of AlN powder with a purity of 99.99% and 0.12g of Ni powder with a purity of 99.99% were mixed, ground evenly, put into a tantalum carbide crucible, covered with a tantalum carbide cover, and then Put the tantalum crucible into the graphite crucible, screw on the lid of the graphite crucible, put the graphite crucible into an appropriate position in the medium frequency induction heating furnace, and evacuate the system until the vacuum degree is less than 2.0×10 -5 After Torr, fill the cavity with 0.6atm high-purity N 2 Gas (99.999%). Then the system was heated up to 1700°C at a rate of 4°C per minute, and after being kept at 1700°C for 10 hours, it was cooled to room temperature at a rate of 5°C per minute. Finally, Ni-doped AlN crystals will be obtained on the tantalum carbide substrate, such as figure 1 As shown, the length is about 0.3cm and the width is about 0.2cm.

[0035] The Ni content was determined to be 0.01 a...

Embodiment 2

[0038] According to the stoichiometric ratio, 4.2g of AlN powder with a purity of 99.99% and 0.15g of Ni powder with a purity of 99.99% were mixed, ground evenly, put into a tungsten crucible, covered with a tungsten lid, and then put the tungsten crucible Put the graphite crucible into the graphite crucible, screw on the graphite crucible cover, put the graphite crucible into the appropriate position in the medium frequency induction heating furnace, and vacuum the system until the vacuum degree is less than 2.0×10 -5 After Torr, fill the cavity with 0.6atm high-purity N 2 Gas (99.999%). Then the system was heated up to 1800°C at a rate of 4°C per minute, and after being kept at 1800°C for 6 hours, it was cooled to room temperature at a rate of 5°C per minute. Finally, Ni-doped AlN crystals will be obtained on the tungsten substrate. The Ni content was determined to be 0.07 at.% by inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The thermal conductivity ...

Embodiment 3

[0040] Mix 4.2g of AlN powder with a purity of 99.99% and 0.3g of Ni powder with a purity of 99.99% according to the stoichiometric ratio. Put the graphite crucible into the graphite crucible, screw on the graphite crucible cover, put the graphite crucible into the appropriate position in the medium frequency induction heating furnace, and vacuum the system until the vacuum degree is less than 2.0×10 -5 After Torr, fill the cavity with 0.6atm high-purity N 2 Gas (99.999%). Then the system was heated up to 1800°C at a rate of 4°C per minute, and after being kept at 1800°C for 50 hours, it was cooled to room temperature at a rate of 5°C per minute. Finally, Ni-doped AlN crystals will be obtained on the tungsten substrate. The Ni content was measured to be 1 at.% by inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The thermal conductivity was tested to be 253W / m·K by a comprehensive physical property testing system. Excited with a 532nm laser, stimulated emi...

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Abstract

The invention provides a laser crystal, its preparation method and application. The laser crystal is transition metal-doped aluminum nitride, which has a chemical formula of: M<3+>:AlN. Specifically, M is one or more of Cr, Mn, Fe, Co and Ni, and they are in a molar doping ratio of: 0.01-2at.% of Cr; 0.01-2at.% of Mn; 0.01-3at.% of Fe; 0.01-3at.% of Co; and 0.01-1at.% of Ni. The obtained M<3+>:AlN crystal is transparent, can produce stimulated radiation, and has very high thermal conductivity, thus being able to be used as a laser operating substance and used for manufacturing high-power solid lasers.

Description

technical field [0001] The invention belongs to the field of crystal materials, in particular to a stimulated radiation laser crystal and its preparation method and application. Background technique [0002] With the development of laser technology, lasers have important applications in various aspects such as industry, agriculture, national defense, precision measurement and detection, communication and information processing, and medical treatment. Among them, due to the high power, high conversion efficiency and long life of solid-state lasers, they are often used in ranging, tracking, guidance, drilling, cutting, annealing of semiconductor materials, micromachining of electronic devices, atmospheric detection, and spectral research , surgery and eye surgery, plasma diagnosis, pulse holography, and laser nuclear fusion, etc., so it plays a pivotal role in the laser family (see R.L.Byer, Science.239, 4841 (1988)). [0003] An important factor restricting the development o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B1/10H01S3/16
Inventor 陈小龙姜良宝王文军左思斌鲍慧强李辉王军
Owner INST OF PHYSICS - CHINESE ACAD OF SCI