Performance index test method of PIN-FET (p-intrinsic-n field effect transistor) light receiving assembly

A technology of PIN-FET and light-receiving components, which is applied in the directions of testing optical properties, measuring electricity, measuring devices, etc., can solve the problems of inapplicability to the application of analog sensing systems and the inability to describe the performance of PIN-FET light-receiving components.

Active Publication Date: 2012-11-14
北京浦丹光电股份有限公司
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Problems solved by technology

However, in analog applications, the aforementioned performance indicators cannot describe the performance of PIN-FET light-receiving components, and are not suitable for the application of analog sensing systems

Method used

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  • Performance index test method of PIN-FET (p-intrinsic-n field effect transistor) light receiving assembly
  • Performance index test method of PIN-FET (p-intrinsic-n field effect transistor) light receiving assembly
  • Performance index test method of PIN-FET (p-intrinsic-n field effect transistor) light receiving assembly

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Embodiment Construction

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0040] The embodiment of the present invention provides a method for testing the performance index of a PIN-FET light-receiving component, and the parameters include 1. linear responsivity, 2. linear minimum optical power, 3. linear saturated optical power, 4. no photovoltage, 5. . Bandwidth, 6. RMS noise voltage and other performance index parameters. The above parameters can be used to measure and evaluate the performance index of the PIN-FET light receiving component under the condition of analog light signal input, and are suitable for the application of analog light sensing system.

[0041] Please refer to Table 1, Table 1 is the definition of each parameter involved in the embodiment of the present invention.

[0042]

[0043]

[0044] Table 1 parameter definition

[0045]1. Measurement of no photovoltage

[0046] Pleas...

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Abstract

The invention relates to a performance index test method of a PIN-FET (p-intrinsic-n field effect transistor) light receiving assembly. The performance index test method comprises the steps that direct current light signals are input into a linear response region of the PIN-FET light receiving assembly so that the output voltage of the PIN-FET light receiving assembly is the first preset voltage V1; sine alternating current light signals with the frequency being 10KHz are added into the direct current light signals, and the peak-to-peak value of the output voltage of the PIN-FET light receiving assembly is the second preset voltage V2; and the frequency of the sine alternating current light signals is increased, the frequency of the sine alternating current light signals when the peak-to-peak value of the output voltage of the PIN-FET light receiving assembly is lowered to 0.707.V2 is read, and the 3dB bandwidth of the PIN-FET light receiving assembly is obtained. The performance index test method is used for solving the signal to noise ratio problem of an analog optical fiber sensing system, and the system design problem in the exiting analog optical fiber sensing can be creatively solved through the introduction of the performance index test method.

Description

technical field [0001] The invention relates to a method for testing performance indexes of a PIN-FET light receiving component, in particular to a method and a device for measuring the linear responsivity, bandwidth and other related performance indexes of a PIN-FET light receiving component. Background technique [0002] The current market application of PIN-FET (P-Intrinsic-N Field-Effect Transistor) optical receiving components is mainly in the field of analog optical fiber sensing such as fiber optic gyroscopes and fiber optic current sensors. The PIN-FET optical receiving component is used as the optical signal receiving part, which plays the role of photoelectric conversion and signal amplification. [0003] Please refer to figure 1 , figure 1 It is the circuit diagram of the PIN-FET light receiving component. The PIN-FET light-receiving component uses a high-linearity photodiode chip (Photodiode Chip) and a pre-transimpedance amplifier circuit composed of a field ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00G01M11/02
Inventor 耿凡毛健王兵
Owner 北京浦丹光电股份有限公司
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