Package structure of double-gate quad-terminal III-nitride-enhanced hemt device

Abstract

A packaging structure of a double-grid four-end III-group nitride enhanced type high electron mobility transistor (HEMT) device comprises a base and an HEMT device installed on the base. The double-grid four-end III-group nitride enhanced type high electron mobility transistor (HEMT) device comprises an alloplasmic structure, a source pole and a drain pole, wherein the source pole is electrically connected with the drain pole through two-dimensional electronic gas in the alloplasmic structure. The alloplasmic structure comprises a first semiconductor arranged between the source pole and the drain pole, a second semiconductor formed on the surface of the first semiconductor, a main grid on the surface of the semiconductor, a dielectric layer formed on the surfaces of the second semiconductor and the main grid, a top grid on the surface of the dielectric layer, a partial pressure compensation circuit for enabling the main grid and the top grid to achieve simultaneous signal control and the like, wherein the partial pressure semiconductor circuit is mainly composed of discrete devices like resistors and capacitors. By means of the partial pressure compensation circuit, the amplitude and phase relation relationship of the top grid and the main grid can be regulated. The packaging structure can effectively control the 'current collapse effect' in the enhanced type HEMT device, and a double-grid electrode four-end device equal to a three-end device can be applied to the circuit.

Description

Technical field [0001] The invention relates to an enhanced high electron mobility transistor device (Enhancement-mode High Electron Mobility Transistor, E-mode HEMT), in particular to a double-gate four-terminal group III nitride enhanced HEMT device packaging structure, which can be applied to power switches, etc. In the device. Background technique [0002] Due to piezoelectric polarization and spontaneous polarization effects, on the group III nitride semiconductor heterostructure (Heterostructure), such as AlGaN / GaN, a high concentration of two-dimensional electron gas can be formed. In addition, group III nitride semiconductors have high dielectric breakdown field strength and good high temperature resistance. The HEMT prepared by the group III nitride heterostructure can not only be applied to high-frequency devices, but also suitable for high-voltage, high-current power switching devices. When applied to high-power switching circuits, for circuit design simplicity and s...

AI Technical Summary

Problems solved by technology

However, the current power switching devices in power electronic circuits work in the form of three terminals. The application of four-terminal devices in the circuit requires further modification of the circuit design, which will increase the complexity of its packaging structure and related circuits.

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