Heat treating apparatus

Abstract

The purpose of the invention is to accurately control the in-plane temperature of susceptors by controlling the penetration of magnetic flux entering from rim portions of the susceptors. A heat treating apparatus is provided with: susceptors (200) which are conductive members with a loading surface on which a substrate is to be carried, each susceptor being divided into a rim portion (210) and an interior portion (220) surrounded by same, said interior portion comprising a thick plate-like heat generating body, and said rim portion formed by layering thin plate-like heat generating bodies, which are thinner than the interior portion, in a manner electrically insulated from each other; and electromagnets (120) which, from the lateral side of the susceptors, form alternating current magnetic fields parallel to the loading surfaces. The heat treating apparatus performs temperature control by causing the ratio between heat generation at the rim portion of each susceptor and heat generation at the interior portion to change by using two frequencies of high frequency current applied to the induction coil (124) wounded around the electromagnets to control the induction current generated at each thin film-like heat generating body and control penetration of magnetic flux up to the interior portions.

Description

technical field

[0001] The present invention relates to a heat treatment apparatus for performing predetermined heat treatment on substrates such as semiconductor wafers and glass substrates. Background technique

[0002] When manufacturing a semiconductor integrated circuit, various heat treatments such as a silicon film or a silicon oxide film and the like, and various heat treatments such as oxidation treatment are performed on the surface of the substrate. When performing these heat treatments, a so-called batch-type heat treatment apparatus capable of arranging a plurality of semiconductor wafers (hereinafter, simply referred to as "wafers") and performing heat treatment at one time is often used.

[0003] As a batch type heat treatment apparatus, an electric furnace system (hot wall system) in which an electric furnace is used to heat a reaction tube accommodating a plurality of wafers is mainly used. However, in the electric furnace system, since the heat capacity of...

Examples

Embodiment Construction

[0059] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the structural unit which has substantially the same functional structure, and repeated description is abbreviate|omitted.

[0060] (Example of configuration of heat treatment equipment)

[0061] First, a heat treatment apparatus according to an embodiment of the present invention will be described. Here, with reference to the accompanying drawings, a batch-type vertical heat treatment device (hereinafter referred to simply as a "heat treatment device") capable of heat-treating multiple pieces of a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate to be processed will be described. ) as an example to illustrate. figure 1 is a cross-sectional view showing a configuration example of a heat treatment apparatus, figure 2 It is a perspe...

technical field

[0001] The present invention relates to a heat treatment apparatus for performing predetermined heat treatment on substrates such as semiconductor wafers and glass substrates. Background technique

[0002] When manufacturing a semiconductor integrated circuit, various heat treatments such as a silicon film or a silicon oxide film and the like, and various heat treatments such as oxidation treatment are performed on the surface of the substrate. When performing these heat treatments, a so-called batch-type heat treatment apparatus capable of arranging a plurality of semiconductor wafers (hereinafter, simply referred to as "wafers") and performing heat treatment at one time is often used.

[0003] As a batch type heat treatment apparatus, an electric furnace system (hot wall system) in which an electric furnace is used to heat a reaction tube accommodating a plurality of wafers is mainly used. However, in the electric furnace system, since the heat capacity of...

Examples

Embodiment Construction

[0059] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the structural unit which has substantially the same functional structure, and repeated description is abbreviate|omitted.

[0060] (Example of configuration of heat treatment equipment)

[0061] First, a heat treatment apparatus according to an embodiment of the present invention will be described. Here, with reference to the accompanying drawings, a batch-type vertical heat treatment device (hereinafter referred to simply as a "heat treatment device") capable of heat-treating multiple pieces of a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate to be processed will be described. ) as an example to illustrate. figure 1 is a cross-sectional view showing a configuration example of a heat treatment apparatus, figure 2 It is a perspe...

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