Power Module Based on Novel Metal-Ceramic Substrate

Abstract

The invention relates to a power module based on a novel metal-coated ceramic substrate. The power module based on the novel metal-coated ceramic substrate comprises a casing and the metal-coated ceramic substrate, a semiconductor chip and an electrode terminal are connected with a metal layer of the metal-coated ceramic substrate, the electrode terminal penetrates through the casing and is arranged at the top of the casing, the metal-coated ceramic substrate comprises a ceramic plate and the metal layer compounded on at least one face of the ceramic plate, at least one radiating tube is arranged in the ceramic plate, connectors on two sides of the radiating tube are positioned on the external side of the ceramic plate, or two ends of the radiating tube are connected with the connectors arranged on the ceramic plate, and the bottom of the casing is fixedly connected on the ceramic plate. The power module based on the novel metal-coated ceramic substrate is reasonable in structure, small in size and high in radiating efficiency, service life of the power module can be prolonged, reliability of the power module can be improved, and the power module can be widely applied to high-power electric power semiconductor modules, intelligent power components, automotive electronics and solar panel components.

Description

technical field [0001] The invention relates to a power module based on a novel metal-covered ceramic substrate, which belongs to the technical field of semiconductors. Background technique [0002] A semiconductor power module mainly includes a bottom plate, a metal-ceramic substrate, a semiconductor chip, electrode terminals and a housing. Usually there are several power semiconductor chips in the power module, such as MOSFET or IGBT chips and diode chips are integrated and soldered or pasted on the metal layer of the metal ceramic substrate, and the electrode terminals are also welded on the metal layer of the metal ceramic substrate On and through the housing to connect with external devices to realize the input and output of the power module, and the metal-ceramic substrate is welded on the copper base plate. During the working process of the semiconductor power module, the heat generated by the semiconductor chip can be quickly absorbed through the copper base plate. ...

AI Technical Summary

Problems solved by technology

This heat dissipation structure has the following problems: 1. Since the power module is installed on the heat sink, it is necessary to fill the gap between the copper base plate and the heat sink with thermal conductive silicone grease, which increases the thermal resistance, especially the distance between the chip and the heat sink is relatively long. far, thus reducing the cooling effect

2. Chips and other devices are welded on the metal-clad ceramic substrate, and its bottom is welded to the copper base plate. After repeated welding, the metal-clad ceramic substrate often appears concave, and cannot form a good and close contact with the copper base plate. Therefore, it will affect the heat dissipation effect of the power module during work. If the heat accumulated in the power module for a long time cannot be dissipated in time, it will greatly affect the quality of the power module, and even damage the chips in the power module, resulting in damage to the power module.

3. When the heat sink is connected to the bottom of the copper base plate, and the height of the heat sink is high, it will increase the installation height of the power device and make it larger, which is not suitable for some small installation spaces.

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