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A method for producing a deposit and a deposit on a surface of a silicon substrate

A silicon substrate and deposit technology, applied in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as weak passivation, and achieve the effects of good passivation properties, short purge time, and good passivation effect

Inactive Publication Date: 2013-01-23
BENEQ OY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, the aluminum oxide layer grows evenly, but results in a deposit with weak passivating properties on the silicon surface

Method used

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  • A method for producing a deposit and a deposit on a surface of a silicon substrate
  • A method for producing a deposit and a deposit on a surface of a silicon substrate
  • A method for producing a deposit and a deposit on a surface of a silicon substrate

Examples

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Effect test

Embodiment 1

[0073] In this example, according to figure 2 In the illustrated embodiment of the invention, a passivation deposit is formed on the surface of a single crystal silicon substrate (eg, a single crystal wafer).

[0074] Condition the substrate before introducing it into the reaction space. In this step, possible impurities were removed from the exposed surface of the monocrystalline silicon substrate by etching in a 1% HF solution for 30 s, followed by rinsing in distilled water.

[0075] After conditioning, the substrate was inserted into the reaction space of a P400ALD batch unit (obtained from Beneq OY, Finland). The substrate is positioned within the reaction space such that the surface of the single crystal silicon substrate is exposed to the reaction environment.

[0076]After the preparation of loading the substrate into the ALD unit, the reaction space of the ALD unit is pumped down to negative pressure and a continuous carrier gas flow is set to achieve a process pre...

Embodiment 2

[0081] In this example, according to figure 1 In the illustrated embodiment of the invention, a passivation deposit is formed on the surface of a single crystal silicon substrate (eg, a single crystal wafer).

[0082] Condition the substrate before introducing it into the reaction space. In this step, possible impurities were removed from the exposed surface of the monocrystalline silicon substrate by etching in a 1% HF solution for 30 s, followed by rinsing in distilled water.

[0083] After conditioning, the substrate was inserted into the reaction space of a P400ALD batch unit (obtained from Beneq OY, Finland). The substrate is positioned in the reaction space such that the surface of the single crystal silicon substrate is exposed to the reaction environment.

[0084] After the preparation of loading the substrate into the ALD unit is completed, the reaction space of the ALD unit is pumped down to negative pressure, and a continuous carrier gas flow is set to achieve a p...

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Abstract

A deposit and a method for producing a deposit on a surface of a silicon substrate. The deposit comprises aluminum oxide, and the method comprises in any order the alternating steps of a) introducing into a reaction space one of water and ozone as a precursor for oxygen, b) introducing into a reaction space the other of water and ozone as a precursor for oxygen, c) introducing into a reaction space a precursor for aluminum and subsequently purging the reaction space; with the provisions that when step a) or step b) precedes step c) then the reaction space is purged before step c), and that the reaction space is not purged between step a) and step b), when step a) precedes step b) or when step b) precedes step a).

Description

field of invention [0001] The present invention relates to a method of producing a deposit comprising aluminum oxide on the surface of a silicon substrate. Further, the invention relates to deposits on the surface of silicon substrates. Background of the invention [0002] Atomic layer deposition (ALD) is a well-known method for generating material deposits on substrates of different shapes. In the ALD method, two or more different chemical agents (precursors) are introduced into a reaction space in a sequential, alternating manner, and in the reaction space the chemical agents are adsorbed on a surface, for example, on a substrate surface. [0003] Sequential, alternating introduction of chemicals or precursors is often referred to as pulse or dosing (chemicals or precursors). There is usually a purge period between the pulses of each chemical, during which a gas stream that does not react with the chemical used in the process is introduced through the reaction space. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455
CPCC23C16/45525C23C16/403H01L21/02178H01L21/0228C23C16/40C23C16/455
Inventor J·史卡波
Owner BENEQ OY
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