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Cutting method for MEMS wafer

A cutting method, wafer technology, applied in the fields of technology for producing decorative surface effects, decorative arts, gaseous chemical plating, etc.

Active Publication Date: 2013-01-30
MEMSIC SEMICON WUXI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is that existing MEMS wafer cutting methods cannot avoid defects such as device contamination by dirty water particles, large side particle contamination, and chipping. The present invention aims to provide a new MEMS wafer cutting method. method to achieve the cutting effect of MEMS wafers without edge chipping and low contamination

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  • Cutting method for MEMS wafer
  • Cutting method for MEMS wafer
  • Cutting method for MEMS wafer

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Embodiment Construction

[0023] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] The cutting method of the MEMS wafer that the present invention relates to, it comprises the following steps:

[0025] The first step, to protect the MEMS structure,

[0026] Such as figure 1 As shown, the front side 11 of the MEMS wafer 1 is provided with MEMS structures 13 . Paste the first film 2 with holes 21 on the front surface of the wafer 11. The holes 21 correspond to the MEMS structures 13 one by one, and the size of the holes 21 is slightly larger than the MEMS structures 13. The MEMS structure corresponds to the middle position of the holes 21. The complete second membrane 22 is pasted on the top of the first membrane 2, thereby forming a closed protection space at the hole 21, and the MEMS structure 13 is effectively protected.

[0027] In the second step, wafer thinning,

[0028] The backside 12 of the wafer 1 is thinn...

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Abstract

The invention relates to a method for a MEMS wafer. The cutting method comprises the following steps of pasting a membrane on the front surface of the wafer to protect an MEMS structure; focusing a laser on the inner part of the wafer, irradiating to form a modified layer at a position from the front surface of the wafer to the inner part of the wafer; irradiating the laser to the back surface of the wafer at a position corresponding to that of the modified layer so as to form a mark groove on the back surface of the wafer; performing water jet cutting on the back surface of the wafer along the position of the mark groove but do not reach the bottom so as to form a water jet cutting groove from the back surface of the wafer to the inner part of the wafer, wherein one end far away from the back surface of the wafer of the water jet cutting groove is connected with the modified layer; and extending splits along the modified layer till to all the MEMS structures are separated completely from each other. The method for the MEMS wafer combines the advantages of laser irradiation and water jet cutting, and realizes the edge breakage-free and low-contamination cutting for the MEMS wafer.

Description

technical field [0001] The present invention relates to a cutting method of a semiconductor wafer, in particular to a cutting method of a MEMS (Micro-Electro-Mechanical Systems, Micro-Electro-Mechanical Systems) wafer. Background technique [0002] At present, the cutting methods of MEMS wafers mainly include backside water jet half-cutting and splitting process, and laser process. As we all know, MEMS devices are extremely sensitive to particles, and the particles generated in the cutting process will affect the reliability of the device, and even cause device failure in severe cases. As far as the backside waterjet half-cutting and splitting process is concerned, although it can protect MEMS devices from being contaminated by cutting water containing silicon powder during the cutting process, the subsequent splitting process will produce uneven split profiles and uneven cracks. On the positive side, in severe cases, it will cause damage to the inside of the chip; at the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 徐乃涛刘金峰
Owner MEMSIC SEMICON WUXI
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