Polycrystalline silicon ingot production furnace and crucible thereof

Abstract

The invention discloses a polycrystalline silicon ingot production furnace comprising a top heater and a side heater which are arranged in a furnace chamber, and further comprising a central heater arranged in the furnace chamber and used for heating middle polycrystalline silicon materials in a crucible. Because the central heater is arranged in the middle of the furnace chamber of the polycrystalline silicon ingot production furnace, the central heater emits heat at the same time while the top heater and the side heater emit heat, the temperature of the polycrystalline silicon materials in the crucible rises quickly, the heat transmission distance between the polycrystalline silicon materials in the outer side of the crucible and the polycrystalline silicon materials in the middle of the crucible is shortened simultaneously, the heat transmission time is reduced, and energy loss caused by overlong heating time is avoided. In addition, the central heater is arranged, so that the temperature difference between the polycrystalline silicon materials in the middle of the crucible and the polycrystalline silicon materials in the outer side of the crucible is reduced, and the quality of the polycrystalline silicon ingots are ensured. The invention also discloses the crucible for the polycrystalline silicon ingot production furnace.

Description

technical field [0001] The invention relates to the technical field of polysilicon, in particular to a polysilicon ingot casting furnace. In addition, the present invention also relates to a crucible for the above-mentioned polysilicon ingot furnace. Background technique [0002] Casting polysilicon ingots is an important process in the production of polysilicon solar cells, and the quality of polysilicon ingots will directly affect the conversion efficiency and quality of solar cells. [0003] Casting polysilicon ingots can be roughly divided into three processes: spraying - charging - ingot casting. Among them, the materials used in the spraying process are silicon nitride solution and crucible, and the crucible is usually made of high-purity silicon dioxide; the silicon nitride solution is used to spray on the inner wall of the crucible, and its function is to isolate the silicon solution from the crucible. Prevent the combination of the two from reacting, causing stick...

AI Technical Summary

Problems solved by technology

[0007] First, since the top heater 101 and the side heater 102 heat the outer silicon material in the crucible 200 by heat radiation, the middle silicon material in the crucible 200 cannot be heated, so the temperature rise of the middle silicon material in the crucible 200 It is completely realized by the heat transfer of the inner and outer silicon materials in the crucible 200, but the temperature difference between the outer silicon material and the middle silicon material in the crucible 200 is very large, and it takes a long time to make the temperature of the silicon material in the crucible 200 uniform. thus wasting energy

[0008] Second, during the crystal growth process, due to the large temperature difference between the inside and outside of the silicon material, the molten silicon material will flow in a circular manner due to the temperature difference. Ingot quality

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